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參數資料
| 型號： | RFD8P06 |
| 廠商： | Intersil Corporation |
| 英文描述： | 8A, 60V, 0.300 Ohm, P-Channel Power MOSFETs |
| 中文描述： | 8A條，60V的，0.300歐姆，P溝道功率MOSFET |
| 文件頁數： | 1/8頁 |
| 文件大?。?/td> | 87K |
| 代理商： | RFD8P06 |
4-117
File Number
3937.5
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
PSPICE is a registered trademark of MicroSim Corporation.
http://www.intersil.com or 407-727-9207
|
Copyright Intersil Corporation 1999.
RFD8P06E, RFD8P06ESM, RFP8P06E
8A, 60V 0.300 Ohm, P-Channel Power
MOSFETs
These are P-Channel power MOSFETs manufactured using
the MegaFET process. This process, which uses feature
sizes approaching those of LSI integrated circuits gives
optimum utilization of silicon, resulting in outstanding
performance. They were designed for use in applications
such as switching regulators, switching converters, motor
drivers, relay drivers and emitter switches for bipolar
transistors. These transistors can be operated directly from
integrated circuits.
The RFD8P06E, RFD8P06ESM and RFP8P06E incorporate
ESD protection and are designed to withstand 2kV (Human
Body Model) of ESD.
Formerly developmental type TA49044.
Features
8A, 60V
r
DS(ON)
= 0.300
Temperature Compensating PSPICE
Model
2kV ESD Protected
Peak Current vs Pulse Width Curve
UIS Rating Curve
175
o
C Operating Temperature
Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
Packaging
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFP8P06E
TO-220AB
RFP8P06E
RFD8P06ESM
TO-252AA
D8P06E
RFD8P06E
TO-251AA
D8P06E
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-252AA variant in tape and reel, i.e.
RFD8P06ESM9A.
G
D
S
JEDEC TO-220AB
JEDEC TO-251AA
JEDEC TO-252AA
GATE
DRAIN (FLANGE)
SOURCE
DRAIN
SOURCE
DRAIN
DRAIN (FLANGE)
GATE
GATE
SOURCE
DRAIN (FLANGE)
Data Sheet
July 1999
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PDF描述 |
|---|---|
| RFP8P06LE | 8A, 60V, 0.300 Ohm, ESD Rated, P-Channel Power MOSFET(8A, 60V, 0.300Ω，額定靜電釋放P溝道功率MOS場效應管) |
| RFP8P10 | 8A, 100V, 0.400 Ohm, P-Channel Power MOSFET(8A, 100V, 0.400 Ω,P溝道增強模式功率MOS場效應管) |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| RFD8P06E | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
| RFD8P06E_02 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:8A, 60V, 0.300 Ohm, P-Channel Power MOSFETs |
| RFD8P06ESM | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| RFD8P06ESM9A | 功能描述:MOSFET -60V Single RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| RFD8P06LE | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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