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參數(shù)資料
| 型號： | RFF60P06 |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 25A⒂, 60V, 0.030 Ohm, P-Channel Power MOSFET |
| 中文描述： | 25 A, 60 V, 0.03 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-254AA |
| 文件頁數(shù)： | 1/8頁 |
| 文件大小： | 88K |
| 代理商： | RFF60P06 |
4-181
File Number
3975.2
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
PSPICE is a registered trademark of MicroSim Corporation.
http://www.intersil.com or 407-727-9207
|
Copyright
Intersil Corporation 1999.
RFF60P06
25A, 60V 0.030 Ohm, P-Channel Power
MOSFET
The RFF60P06 P-Channel power MOSFET is manufactured
using the MegaFET process. This process, which uses
feature sizes approaching those of LSI circuits gives
optimum utilization of silicon, resulting in outstanding
performance. It was designed for use in applications such as
switching regulators, switching converters, motor drivers,
and relay drivers. These transistors can be operated directly
from integrated circuits.
Reliability screening is available as either commercial or
TX/TXV equivalent of MIL-S-19500. Contact Intersil
Corporation High-Reliability Marketing group for any desired
deviations from the data sheet.
Formerly developmental type TA09835.
Commercial Version: RFG60P06E.
Current is limited by the package capability.
Features
25A, 60V
r
DS(ON)
= 0.030
Temperature Compensating PSPICE
Model
Peak Current vs Pulse Width Curve
UIS Rating Curve
150
o
C Operating Temperature
Reliability Screened
Symbol
Packaging
JEDEC TO-254AA
CAUTION: Berylia Warning per MIL-S-19500.
Refer to package specifications.
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFF60P06
TO-254AA
RFF60P06
NOTE: When ordering, use the entire part number.
D
G
S
GATE
SOURCE
DRAIN
PACKAGE TAB
(ISOLATED)
Data Sheet
September 1998
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