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參數(shù)資料
| 型號： | RFG60P06E |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 60A, 60V, 0.030 Ohm, ESD Rated, P-Channel Power MOSFET(60A, 60V, 0.030 Ω,P溝道功率MOS場效應(yīng)管) |
| 中文描述： | 60 A, 60 V, 0.03 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-254AA |
| 文件頁數(shù)： | 1/7頁 |
| 文件大小： | 65K |
| 代理商： | RFG60P06E |
4-154
File Number
3989.3
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
PSPICE is a registered trademark of MicroSim Corporation.
http://www.intersil.com or 407-727-9207
|
Copyright
Intersil Corporation 1999.
RFG60P06E
60A, 60V 0.030 Ohm, ESD Rated,
P-Channel Power MOSFET
The RFG60P06E P-Channel power MOSFET is
manufactured using the MegaFET process. This process,
which uses feature sizes approaching those of LSI circuits
gives optimum utilization of silicon, resulting in outstanding
performance. They were designed for use in applications
such as switching regulators, switching converters, motor
drivers and relay drivers. These transistors can be operated
directly from integrated circuits.
The RFG60P06E incorporates ESD protection and is
designed to withstand 2kV (Human Body Model) of ESD.
Formerly developmental type TA09836.
Features
60A, 60V
r
DS(ON)
= 0.030
Temperature Compensating PSPICE
Model
2kV ESD Rated
Peak Current vs Pulse Width Curve
UIS Rating Curve
175
o
C Operating Temperature
Related Literature
Symbol
Packaging
JEDEC STYLE TO-247
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFG60P06E
TO-247
RFG60P06E
NOTE: When ordering use the entire part numberr RFG60P06E.
D
G
S
DRAIN
(BOTTOM
SIDE METAL)
SOURCE
DRAIN
GATE
Data Sheet
July 1999
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