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參數資料
| 型號： | RFH12N40 |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 12A, 350V and 400V, 0.380 Ohm, N-Channel Power MOSFETs |
| 中文描述： | 12 A, 400 V, 0.38 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-218AC |
| 文件頁數： | 1/5頁 |
| 文件大小： | 40K |
| 代理商： | RFH12N40 |
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207
|
Copyright
Intersil Corporation 1999
RFH12N35, RFH12N40
12A, 350V and 400V 0.380 Ohm,
N-Channel Power MOSFETs
These are N-Channel enhancement mode silicon gate
power field effect transistors designed for applications such
as switching regulators, switching converters, motor drivers,
relay drivers and drivers for high-power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.
Formerly developmental type TA17434.
Features
12A, 350V and 400V
r
DS(ON)
= 0.380
Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
Packaging
JEDEC TO-218AC
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFH12N35
TO-218AC
RFH12N35
RFH12N40
TO-218AC
RFH12N40
NOTE: When ordering, use the entire part number.
G
D
S
DRAIN
SOURCE
DRAIN
GATE
October 1998
File Number
1630.2
Data Sheet
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