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參數資料
| 型號： | RFL4N12 |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 4A, 120V and 150V, 0.400 Ohm, N-Channel Power MOSFETs |
| 中文描述： | 4000 mA, 120 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-205AF |
| 文件頁數： | 1/4頁 |
| 文件大小： | 31K |
| 代理商： | RFL4N12 |
5-1
Semiconductor
September 1998
Features
4A, 120V and 150V
r
DS(ON)
= 0.400
SOA is Power Dissipation Limited
Nanosecond Switching Speeds
Linear Transfer Characteristics
High Input Impedance
Majority Carrier Device
Description
These are N-Channel enhancement mode silicon gate
power field effect transistors designed for applications such
as switching regulators, switching converters, motor drivers,
relay drivers and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.
Formerly developmental type TA9192.
Symbol
Packaging
JEDEC TO-205AF
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFL4N12
TO-205AF
RFL4N12
RFL4N15
TO-205AF
RFL4N15
NOTE: When ordering, use the entire part number.
G
D
S
DRAIN
(CASE)
SOURCE
GATE
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright
Harris Corporation 1998
File Number
1462.2
RFL4N12,
RFL4N15
4A, 120V and 150V, 0.400 Ohm,
N-Channel Power MOSFETs
[ /Title
(RFL4N
12,
RFL4N1
5)
/Subject
(4A,
120V
and
150V,
0.400
Ohm, N-
Channel
Power
MOS-
FETs)
/Author
()
/Key-
words
(Harris
Semi-
conduc-
tor, N-
Channel
Power
MOS-
FETs,
TO-
205AF)
/Creator
()
/DOCIN
FO pdf-
mark
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