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參數資料
| 型號： | RFM18N10 |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | CAT6A PVC BLUE F/UTP BULK CABLE |
| 中文描述： | 18 A, 100 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA |
| 文件頁數： | 1/5頁 |
| 文件大小： | 38K |
| 代理商： | RFM18N10 |
5-1
Semiconductor
September 1998
RFM18N08, RFM18N10,
RFP18N08, RFP18N10
18A, 80V and 100V, 0.100 Ohm,
N-Channel Power MOSFETs
Features
18A, 80V and 100V
r
DS(ON)
= 0.100
Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Description
These are N-Channel enhancement mode silicon gate
power field effect transistors designed for applications such
as switching regulators, switching converters, motor drivers,
relay drivers and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated cir-
cuits.
Formerly developmental type TA17421.
Symbol
Packaging
JEDEC TO-204AA
JEDEC TO-220AB
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFM18N08
TO-204AA
RFM18N08
RFM18N10
TO-204AA
RFM18N10
RFP18N08
TO-220AB
RFP18N08
RFP18N10
TO-220AB
RFP18N10
NOTE: When ordering, use the entire part number.
D
G
S
DRAIN
(FLANGE)
SOURCE (PIN 2)
GATE (PIN 1)
SOURCE
DRAIN
GATE
DRAIN
(TAB)
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright
Harris Corporation 1998
File Number
1446.1
[ /Title
(RFM18
N08,
RFM18
N10,
RFP18N
08,
RFP18N
10)
/Subject
(18A,
80V and
100V,
0.1 Ohm,
N-Chan-
nel
Power
MOS-
FETs)
/Author
()
/Key-
words
(Harris
Semi-
conduc-
tor, N-
Channel
Power
MOS-
FETs,
TO-
204AA,
TO-
220AB)
/Creator
()
/DOCIN
FO pdf-
mark
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