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參數資料
| 型號： | RFP10N15 |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 10A, 150V, 0.300 Ohm, N-Channel Power MOSFETs |
| 中文描述： | 10 A, 150 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA |
| 文件頁數： | 1/5頁 |
| 文件大小： | 40K |
| 代理商： | RFP10N15 |
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207
|
Copyright
Intersil Corporation 1999
RFP10N15
10A, 150V 0.300 Ohm, N-Channel Power
MOSFETs
These are N-channel enhancement-mode silicon-gate
power field effect transistors designed for applications such
as switching regulators, switching converters, motor drivers,
relay drivers, and drivers for high-power bipolar switching
transistors requiring high speed and low gate-drive power.
These types can be operated directly from integrated
circuits.
Formerly developmental type TA09192.
Features
10A, 150V
r
DS(ON)
= 0.300
Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
Packaging
TO-220AB
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFP10N15
TO-220AB
RFP10N15
NOTE: When ordering, include the entire part number.
G
D
S
GATE
DRAIN (FLANGE)
SOURCE
DRAIN
March 1999
File Number
1445.3
Data Sheet
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相關代理商/技術參數 |
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| RFP10N15101 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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| RFP10N15P2 | 制造商:Harris Corporation 功能描述: |
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