- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄374588 > RFP12N18 (HARRIS SEMICONDUCTOR) 12A, 180V and 200V, 0.250 Ohm, N-Channel Power MOSFETs PDF資料下載
參數(shù)資料
| 型號： | RFP12N18 |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 12A, 180V and 200V, 0.250 Ohm, N-Channel Power MOSFETs |
| 中文描述： | 12 A, 180 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA |
| 文件頁數(shù)： | 1/5頁 |
| 文件大小： | 43K |
| 代理商： | RFP12N18 |
1
Semiconductor
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-800-4-HARRIS
|
Copyright
Harris Corporation 1998
RFM12N08, RFM12N10, RFP12N08, RFP12N10
12A, 80V and 100V 0.200 Ohm, N-Channel
Power MOSFETs
These are N-Channel enhancement mode silicon gate
power field effect transistors designed for applications such
as switching regulators, switching converters, motor drivers,
relay drivers and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.
Formerly developmental type TA09594.
Features
12A, 80V and 100V
r
DS(ON)
= 0.200
Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
Packaging
JEDEC TO-204AA
JEDEC TO-220AB
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFM12N08
TO-204AA
RFM12N08
RFM12N10
TO-204AA
RFM12N10
RFP12N08
TO-220AB
RFP12N08
RFP12N10
TO-220AB
RFP12N10
NOTE:
When ordering, use the entire part number.
D
G
S
DRAIN
(FLANGE)
SOURCE (PIN 2)
GATE (PIN 1)
SOURCE
DRAIN
GATE
DRAIN
(TAB)
October 1998
File Number
1386.2
[ /Title
(RFM12
N08,
RFM12
N10,
RFP12
N08,
RFP12
N10)
/Sub-
ject
(12A,
80Vand
100V,
0.2
Ohm,
N-Chan-
nel
Power
MOS-
FETs)
/Author
()
/Key-
words
(Harris
Semi-
conduc-
tor, N-
Chan-
nel
Power
MOS-
FETs,
TO-
204AA,
TO-
220AB)
/Cre-
Data Sheet
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| RFP12N20 | 12A, 180V and 200V, 0.250 Ohm, N-Channel Power MOSFETs |
| RFP12N06 | 17A, 60V, 0.071 Ohm, N-Channel, Logic Level UltraFET Power MOSFET |
| RFP12N06RLE | 17A, 60V, 0.071 Ohm, N-Channel, Logic Level UltraFET Power MOSFET |
| RFP12N10L | 12A, 100V, 0.200 Ohm, Logic Level, N-Channel Power MOSFET(12A, 100V, 0.200 Ω,邏輯電平N溝道功率MOS場效應(yīng)管) |
| RFP12N10L | 12A, 100V, 0.200 Ohm, Logic Level, N-Channel Power MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| RFP12N20 | 制造商:Harris Corporation 功能描述: |
| RFP12P08 | 功能描述:MOSFET TO-220 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| RFP12P10 | 功能描述:MOSFET TO-220 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| RFP14N05 | 功能描述:MOSFET TO-220AB N-Ch Power RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| RFP14N05L | 功能描述:MOSFET TO-220AB N-Ch Power RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。