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參數資料
| 型號： | RFP12P08 |
| 廠商： | INTERSIL CORP |
| 元件分類： | JFETs |
| 英文描述： | 12A, 80V and 100V, 0.300 Ohm, P-Channel Power MOSFETs(12A, 80V 和 100V, 0.300 Ω, P溝道增強模式功率MOS場效應管) |
| 中文描述： | 12 A, 80 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 文件頁數： | 1/5頁 |
| 文件大?。?/td> | 37K |
| 代理商： | RFP12P08 |
4-161
File Number
1495.2
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207
|
Copyright
Intersil Corporation 1999.
RFP12P08, RFP12P10
12A, 80V and 100V 0.300 Ohm, P-Channel
Power MOSFETs
The RFP12P08, and RFP12P10 are P-Channel
enhancement mode silicon gate power field effect transistors
designed for applications such as switching regulators,
switching convertors, motor drivers, relay drivers, and drivers
for high power bipolar switching transistors requiring high
speed and low gate drive power. These types can be
operated directly from integrated circuits.
Formerly developmental type TA17511.
Features
12A, 80V and 100V
r
DS(ON)
= 0.300
SOA is Power Dissipation Limited
Nanosecond Switching Speeds
Linear Transfer Characteristics
High Input Impedance
Majority Carrier Device
Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
Packaging
TO-220AB
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFP12P08
TO-220AB
RFP12P08
RFP12P10
TO-220AB
RFP12P10
NOTE: When ordering, include the entire part number.
G
D
S
SOURCE
DRAIN
GATE
DRAIN
(TAB)
Data Sheet
June 1999
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PDF描述 |
|---|---|
| RFP12P10 | 12A, 80V and 100V, 0.300 Ohm, P-Channel Power MOSFETs(12A, 80V 和 100V, 0.300 Ω, P溝道增強模式功率MOS場效應管) |
| RFP14N06L | 14A, 60V, 0.100 Ohm, Logic Level, N-Channel Power MOSFETs |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| RFP12P10 | 功能描述:MOSFET TO-220 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| RFP14N05 | 功能描述:MOSFET TO-220AB N-Ch Power RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| RFP14N05L | 功能描述:MOSFET TO-220AB N-Ch Power RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| RFP14N05L | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET |
| RFP14N05L_Q | 功能描述:MOSFET TO-220AB N-Ch Power RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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