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參數資料
| 型號： | RFP23N06LE |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 23A, 60V, 0.065 Ohm, Logic Level,N-Channel Power MOSFETs(23A, 60V, 0.065 Ω,邏輯電平,N溝道功率MOS場效應管) |
| 中文描述： | 23 A, 60 V, 0.065 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 文件頁數： | 1/8頁 |
| 文件大小： | 411K |
| 代理商： | RFP23N06LE |
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
PSPICE is a registered trademark of MicroSim Corporation.
http://www.intersil.com or 407-727-9207
|
Copyright
Intersil Corporation 1999
RFP23N06LE, RF1S23N06LESM
23A, 60V, 0.065 Ohm, Logic Level,
N-Channel Power MOSFETs
These N-Channel power MOSFETs are manufactured using
a modern process. This process, which uses feature sizes
approaching those of LSI circuits, gives optimum utilization
of silicon, resulting in outstanding performance. They were
designed for use in applications such as switching
regulators, switching converters, motor drivers, and relay
drivers. These transistors can be operated directly from
integrated circuits.
Formerly developmental type TA49165.
Features
23A, 60V
r
DS(ON)
= 0.065
Temperature Compensating PSPICE
Model
Peak Current vs Pulse Width Curve
UIS Rating Curve
175
o
C Operating Temperature
Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
Packaging
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFP23N06LE
TO-220AB
FP23N06L
RF1S23N06LESM
TO-263AB
F23N06LE
NOTE: Whenordering,usetheentirepartnumber.Addthesuffix9A to
obtain the TO-263AB variant in tape and reel, i.e. RF1S23N06LESM9A.
D
G
S
JEDEC TO-220AB
JEDEC TO-263AB
GATE
DRAIN (FLANGE)
SOURCE
DRAIN
DRAIN
(FLANGE)
GATE
SOURCE
Data Sheet
October 1999
File Number
4077.4
NOT RECOMMENDED FOR NEW DESIGNS
Recommended Possible Replacements:
RFP23N06LE: see HUF76419P3
RF1S23N06LESM: see HUF76419S3S
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