- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄374589 > RFP25N05L (HARRIS SEMICONDUCTOR) 25A, 50V, 0.047 Ohm, Logic Level, N-Channel Power MOSFET PDF資料下載
參數(shù)資料
| 型號(hào)： | RFP25N05L |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 25A, 50V, 0.047 Ohm, Logic Level, N-Channel Power MOSFET |
| 中文描述： | 25 A, 50 V, 0.056 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大小： | 47K |
| 代理商： | RFP25N05L |
6-243
File Number
2270.3
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207
|
Copyright
Intersil Corporation 1999
RFP25N05L
25A, 50V 0.047 Ohm, Logic Level,
N-Channel Power MOSFET
The RFP25N05L is an N-Channel logic level power
MOSFETs are manufactured using the MegaFET process.
This process, which uses feature sizes approaching those of
LSI integrated circuits gives optimum utilization of silicon,
resulting in outstanding performance. The RFP25N05L was
designed for use with logic level (5V) driving sources in
applications such as programmable controllers, automotive
switching, switching regulators, switching converters, motor
relay drivers and emitter switches for bipolar transistors. This
performance is accomplished through a special gate oxide
design which provides full rated conductance at gate biases
in the 3V to 5V range, thereby facilitating true on-off power
control directly from logic circuit supply voltages.
Formerly developmental type TA09871.
Features
25A, 50V
r
DS(ON)
= 0.047
UIS SOA Rating Curve (Single Pulse)
Design Optimized for 5V Gate Drives
Can be Driven Directly from CMOS, NMOS, TTL Circuits
Compatible with Automotive Drive Requirements
SOA is Power Dissipation Limited
Nanosecond Switching Speeds
Linear Transfer Characteristics
High Input Impedance
Majority Carrier Device
Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
Packaging
JEDEC TO-220AB
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFP25N05L
TO-220AB
RFP25N05L
NOTE:
When ordering, include the entire part number.
G
D
S
GATE
DRAIN (FLANGE)
SOURCE
DRAIN
Data Sheet
July 1999
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| RFP25N05 | 25A, 50V, 0.047 Ohm, N-Channel Power MOSFET |
| RFP25N05 | POWER MOS FIELD EFFECT TRANSISTORS |
| RFP25N06 | POWER MOS FIELD EFFECT TRANSISTORS |
| RFP25N06 | 25A, 60V, 0.047 Ohm, N-Channel Power MOSFETs |
| RFP25N06 | 25A, 60V, 0.047 Ohm, N-Channel Power MOSFETs |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| RFP25N06 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:25A, 60V, 0.047 Ohm, N-Channel Power MOSFETs |
| RFP25N06L | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
| RFP2N08 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
| RFP2N08L | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:2A, 80V and 100V, 1.050 Ohm, Logic Level, N-Channel Power MOSFETs |
| RFP2N10 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。