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參數資料
| 型號： | RFP2N08L |
| 廠商： | INTERSIL CORP |
| 元件分類： | JFETs |
| 英文描述： | 2A, 80V, 0.140 Ohm, Logic Level,N-Channel Power MOSFET(2A, 80V, 0.140 Ω, N溝道,邏輯電平,功率MOS場效應管) |
| 中文描述： | 2 A, 80 V, 1.05 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 文件頁數： | 1/5頁 |
| 文件大小： | 35K |
| 代理商： | RFP2N08L |
6-248
File Number
2872.2
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207
|
Copyright
Intersil Corporation 1999
RFP2N08L, RFP2N10L
2A, 80V and 100V 1.050 Ohm, Logic Level,
N-Channel Power MOSFETs
The RFP2N08L and RFP2N10L are N-Channel enhancement
mode silicon gate power field effect transistors specifically
designed for use with logic level (5V) driving sources in
applications such as programmable controllers, automotive
switching, and solenoid drivers. This performance is
accomplished through a special gate oxide design which
provides full rated conductance at gate biases in the 3V to 5V
range, thereby facilitating true on-off power control directly
from logic circuit supply voltages.
Formerly developmental type TA0924.
Features
2A, 80V and 100V
r
DS(ON)
= 1.050
Design Optimized for 5V Gate Drives
Can be Driven Directly from QMOS, NMOS, TTL Circuits
Compatible with Automotive Drive Requirements
SOA is Power Dissipation Limited
Nanosecond Switching Speeds
Linear Transfer Characteristics
High Input Impedance
Majority Carrier Device
Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
Packaging
JEDEC TO-220AB
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFP2N08L
TO-220AB
RFP2N08L
RFP2N10L
TO-220AB
RFP2N10L
NOTE: When ordering, include the entire part number.
G
D
S
GATE
DRAIN (FLANGE)
SOURCE
DRAIN
Data Sheet
July 1999
相關PDF資料 |
PDF描述 |
|---|---|
| RFP2N10L | 2A, 80V and 100V, 1.050 Ohm, Logic Level, N-Channel Power MOSFETs |
| RFP2N08 | 2A, 80V and 100V, 1.05 Ohm, N-Channel Power MOSFETs |
| RFP2N10 | 2A, 80V and 100V, 1.05 Ohm, N-Channel Power MOSFETs |
| RFP2N12L | 2A, 120V, 1.750 Ohm, Logic Level,N-Channel Power MOSFET(2A, 120V,1.750 Ω, N溝道,邏輯電平,功率MOS場效應管) |
| RFP2N12 | 2A, 120V and 150V, 1.750 Ohm, N-Channel Power MOSFETs |
相關代理商/技術參數 |
參數描述 |
|---|---|
| RFP2N10 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
| RFP2N1093 | 制造商:Harris Corporation 功能描述: |
| RFP2N10L | 功能描述:MOSFET TO-220AB N-Ch Power RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| RFP2N12 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:2A, 120V and 150V, 1.750 Ohm, N-Channel Power MOSFETs |
| RFP2N12L | 制造商:Harris Corporation 功能描述: |
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