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參數(shù)資料
| 型號： | RFP2N20 |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 2A, 200V, 3.500 Ohm, N-Channel Power MOSFET |
| 中文描述： | 2 A, 200 V, 3.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 文件頁數(shù)： | 1/5頁 |
| 文件大小： | 40K |
| 代理商： | RFP2N20 |
4-518
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207
|
Copyright
Intersil Corporation 1999
RFP2N20
2A, 200V 3.500 Ohm, N-Channel Power
MOSFET
These are N-Channel enhancement mode silicon gate
power field effect transistors designed for applications such
as switching regulators, switching converters, motor drivers,
relay drivers and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.
Formerly developmental type TA09289.
Features
2A, 200V
r
DS(ON)
= 3.500
Symbol
Packaging
JEDEC TO-220AB
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFP2N20
TO-220AB
RFP2N20
NOTE: When ordering, include the entire part number.
G
D
S
SOURCE
DRAIN
GATE
DRAIN
(FLANGE)
July 1999
File Number
2881.2
Data Sheet
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| RFP2N20L | 功能描述:MOSFET TO-220 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| RFP2NO8L | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
| RFP2P08 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
| RFP2P10 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| RFP-30-100R | 制造商:ANAREN 制造商全稱:Anaren Microwave 功能描述:Flangeless Resistors |
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