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參數資料
| 型號： | RFP30N06LE |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 30A, 60V, ESD Rated, 0.047 Ohm, Logic Level N-Channel Power MOSFETs |
| 中文描述： | 30 A, 60 V, 0.047 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 文件頁數： | 1/8頁 |
| 文件大小： | 80K |
| 代理商： | RFP30N06LE |
6-260
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
PSPICE is a trademark of MicroSim Corporation.
http://www.intersil.com or 407-727-9207
|
Copyright
Intersil Corporation 1999
RFP30N06LE, RF1S30N06LESM
30A, 60V ESD Rated, 0.047 Ohm, Logic
Level N-Channel Power MOSFETs
These are N-Channel power MOSFETs manufactured using
the MegaFET process. This process, which uses feature
sizes approaching those of LSI integrated circuits gives
optimum utilization of silicon, resulting in outstanding
performance. They were designed for use in applications
such as switching regulators, switching converters, motor
drivers and relay drivers. These transistors can be operated
directly from integrated circuits.
These transistors incorporate ESD protection and are
designed to withstand 2kV (Human Body Model) of ESD.
Formerly developmental type TA49027.
Features
30A, 60V
r
DS(ON)
= 0.047
2kV ESD Protected
Temperature Compensating PSPICE Model
Peak Current vs Pulse Width Curve
UIS Rating Curve
Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
Packaging
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFP30N06LE
TO-220AB
F30N06LE
RF1S30N06LESM
TO-263AB
1S30N06L
NOTE: When ordering use the entire part number. Add suffix, 9A, to
obtain the TO-263 variant in tape and reel i.e. RF1S30N06LESM9A.
G
D
S
JEDEC TO-220AB
JEDEC TO-263AB
GATE
DRAIN (FLANGE)
SOURCE
DRAIN
DRAIN
(FLANGE)
GATE
SOURCE
Data Sheet
April 1999
File Number
3629.2
[ /Title
(RFP3
0N06L
E,
RF1S3
0N06L
ESM)
/Sub-
ject
(30A,
60V,
ESD
Rated,
0.047
Ohm,
Logic
Level
N-
Chan-
nel
Power
MOS-
FETs)
/Autho
r ()
/Key-
words
(Inter-
sil
Corpo-
ration,
ESD
Rated,
0.047
Ohm,
Logic
Level
N-
Chan-
相關PDF資料 |
PDF描述 |
|---|---|
| RFP30N06LE | 30A, 60V, ESD Rated, 0.047 Ohm, Logic Level N-Channel Power MOSFETs |
| RF1S30N06LESM | 30A, 60V, ESD Rated, 0.047 Ohm, Logic Level N-Channel Power MOSFETs |
| RF1S30N06LE | 30A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs |
| RF1S30N06LESM | 30A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs |
| RF1S30P05SM | 30A, 50V, 0.065 Ohm,N-Channel PowerMOSFET(30A, 50V, 0.065 Ω,N溝道增強型功率MOS場效應管) |
相關代理商/技術參數 |
參數描述 |
|---|---|
| RFP30N06LE | 制造商:Intersil Corporation 功能描述:MOSFET N LOGIC TO-220 |
| RFP30N06LE_NL | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| RFP30N06LE_Q | 功能描述:MOSFET TO-220AB N-Ch Power RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| RFP-30N50T-S | 制造商:ANAREN 制造商全稱:Anaren Microwave 功能描述:Aluminum Nitride Termination 30 Watts, 50W |
| RFP30N6LER4541 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
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