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參數資料
| 型號： | RFP30P05 |
| 廠商： | INTERSIL CORP |
| 元件分類： | JFETs |
| 英文描述： | 30A, 50V, 0.065 Ohm, P-Channel Power MOSFETs |
| 中文描述： | 30 A, 50 V, 0.065 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 文件頁數： | 1/8頁 |
| 文件大小： | 70K |
| 代理商： | RFP30P05 |
4-126
File Number
2436.4
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
PSPICE is a registered trademark of MicroSim Corporation.
http://www.intersil.com or 407-727-9207
|
Copyright
Intersil Corporation 1999
RFG30P05, RFP30P05, RF1S30P05SM
30A, 50V 0.065 Ohm, P-Channel Power
MOSFETs
These are P-Channel power MOSFETs manufactured
using the MegaFET process. This process, which uses
feature sizes approaching those of LSI circuits, gives
optimum utilization of silicon, resulting in outstanding
performance. They were designed for use in applications
such as switching regulators, switching converters, motor
drivers, and relay drivers. These transistors can be
operated directly from integrated circuits.
Formerly developmental type TA09834.
Features
30A, 50V
r
DS(ON)
= 0.065
Temperature Compensating PSPICE
Model
Peak Current vs Pulse Width Curve
UIS Rating Curve
175
o
C Operating Temperature
Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
Packaging
JEDEC STYLE TO-247
JEDEC TO-220AB
JEDEC TO-263AB
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFG30P05
TO-247
RFG30P05
RFP30P05
TO-220AB
RFP30P05
RF1S30P05SM
TO-263AB
F1S30P05
NOTE: Whenordering,usetheentirepartnumber.Addthesuffix9Ato
obtain the TO-263AB variant in tape and reel, i.e., RF1S30P05SM9A.
D
G
S
DRAIN
(BOTTOM
SIDE METAL)
SOURCE
DRAIN
GATE
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
DRAIN
(FLANGE)
GATE
SOURCE
Data Sheet
July 1999
相關PDF資料 |
PDF描述 |
|---|---|
| RFP30P06 | 30A, 60V, 0.065 Ohm, P-Channel Power MOSFETs |
| RFG30P05 | 30A, 50V, 0.065 Ohm,N-Channel PowerMOSFET(30A, 50V, 0.065 Ω,N溝道增強型功率MOS場效應管) |
| RF1S30P06 | 30A, 60V, 0.065 Ohm, P-Channel Power MOSFETs |
| RF1S30P06SM | 30A, 60V, 0.065 Ohm, P-Channel Power MOSFETs(30A, 50V, 0.066 Ω,P溝道增強型功率MOS場效應管) |
| RFG30P06 | 30A, 60V, 0.065 Ohm, P-Channel Power MOSFETs(30A, 50V, 0.066 Ω,P溝道增強型功率MOS場效應管) |
相關代理商/技術參數 |
參數描述 |
|---|---|
| RFP30P06 | 功能描述:MOSFET TO-247 P-Ch Power RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| RFP-375375-6X50-2 | 制造商:ANAREN 制造商全稱:Anaren Microwave 功能描述:Chip Terminations 300 Watts, 50ohm |
| RFP-375375-6Z50-2 | 制造商:ANAREN 制造商全稱:Anaren Microwave 功能描述:Surface Mount Terminations 30 Watts, 50ohm |
| RFP-375375N6X50-2 | 制造商:ANAREN 制造商全稱:Anaren Microwave 功能描述:Aluminum Nitride Terminations |
| RFP-375375N6Z50-2 | 制造商:ANAREN 制造商全稱:Anaren Microwave 功能描述:Aluminum Nitride Terminations |
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