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參數資料
| 型號： | RFP4N06 |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 4A, 50V and 60V, 0.800 Ohm, N-Channel Power MOSFETs |
| 中文描述： | 4 A, 60 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 文件頁數： | 1/5頁 |
| 文件大小： | 40K |
| 代理商： | RFP4N06 |
4-523
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207
|
Copyright
Intersil Corporation 1999
RFP4N05, RFP4N06
4A, 50V and 60V 0.800 Ohm, N-Channel
Power MOSFETs
These are N-Channel enhancement mode silicon gate
power field effect transistors designed for applications such
as switching regulators, switching converters, motor drivers,
relay drivers and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.
Formerly developmental type TA09378.
Features
4A, 50V and 60V
r
DS(ON)
= 0.800
Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
Packaging
JEDEC TO-220AB
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFP4N05
TO-220AB
RFP4N05
RFP4N06
TO-220AB
RFP4N06
NOTE: When ordering, include the entire part number.
G
D
S
GATE
DRAIN (FLANGE)
SOURCE
DRAIN
June 1999
File Number
2880.2
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相關代理商/技術參數 |
參數描述 |
|---|---|
| RFP4N06L | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:4A, 50V and 60V, 0.800 Ohm, Logic Level, N-Channel Power MOSFETs |
| RFP4N100 | 功能描述:MOSFET TO-220AB N-Ch Power RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| RFP4N35 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| RFP4N40 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| RFP50 | 制造商:Panasonic Industrial Company 功能描述:SUB ONLY RADIO |
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