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參數(shù)資料
| 型號： | RFP50N05L |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 50A, 50V, 0.022 Ohm, Logic Level, N-Channel Power MOSFETs |
| 中文描述： | 50 A, 50 V, 0.027 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 51K |
| 代理商： | RFP50N05L |
6-212
File Number
2424.3
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207
|
Copyright
Intersil Corporation 1999
RFG50N05L, RFP50N05L
50A, 50V 0.022 Ohm, Logic Level,
N-Channel Power MOSFETs
These are logic-level N-channel power MOSFETs
manufactured using the MegaFET process. This process,
which uses feature sizes approaching those of LSI
integrated circuits gives optimum utilization of silicon,
resulting in outstanding performance. They were designed
for use with logic-level (5V) driving sources in applications
such as programmable controllers, automotive switching,
switching regulators, switching converters, motor relay
drivers and emitter switches for bipolar transistors. This
performance is accomplished through a special gate oxide
design which provides full rated conductance at gate bias in
the 3V - 5V range, thereby facilitating true on-off power
control directly from integrated circuit supply voltages.
Formerly developmental type TA09872.
Features
50A, 50V
r
DS(ON)
= 0.022
UIS SOA Rating Curve (Single Pulse)
Design Optimized for 5V Gate Drive
Can be Driven Directly from CMOS, NMOS, TTL Circuits
Compatible with Automotive Drive Requirements
SOA is Power Dissipation Limited
Nanosecond Switching Speeds
Linear Transfer Characteristics
High Input Impedance
Majority Carrier Device
Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
Packaging
JEDEC STYLE TO-247
JEDEC TO-220AB
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFG50N05L
TO-247
RFG50N05L
RFP50N05L
TO-220AB
RFP50N05L
NOTE: Whenordering,usetheentirepartnumber.Addthesuffix9Ato
obtain the TO-263AB variant in the tape and reel, i.e., RFP50N05L9A.
D
G
S
DRAIN
(BOTTOM
SIDE METAL)
SOURCE
DRAIN
GATE
GATE
DRAIN (FLANGE)
SOURCE
DRAIN
Data Sheet
July 1999
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| RFP50N05L | 50A, 50V, 0.022 Ohm, Logic Level, N-Channel Power MOSFETs |
| RFG50N05L | 50A, 50V, 0.022 Ohm, Logic Level, N-Channel Power MOSFETs |
| RFG50N05 | 50A, 50V, 0.022 Ohm, N-Channel Power MOSFETs |
| RFP50N05 | 50A, 50V, 0.022 Ohm, N-Channel Power MOSFETs |
| RFP50N06 | 50A, 60V, 0.022 Ohm, N-Channel Power MOSFETs |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| RFP50N05L_04 | 制造商:AUSTIN 制造商全稱:Austin Semiconductor 功能描述:50A, 50V, 0.022 Ohm, Logic Level, N-Channel Power MOSFETs |
| RFP50N05L_Q | 功能描述:MOSFET 50V/50a/0.022Ohm NCh Logic Level RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| RFP50N06 | 功能描述:MOSFET TO-220AB N-CH POWER RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| RFP50N06 | 制造商:Intersil Corporation 功能描述:MOSFET N TO-220 |
| RFP50N06_F102 | 制造商:Fairchild Semiconductor Corporation 功能描述: |
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