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參數資料
| 型號： | RFP6P10 |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | P CHANNEL ENHANCEMENT MODE POWER FIELD EFFECT TRANSISTORS |
| 中文描述： | P通道增強型功率場效應晶體管 |
| 文件頁數： | 1/5頁 |
| 文件大小： | 310K |
| 代理商： | RFP6P10 |
1
File Number
1490.2
RFP6P08, RFP6P10
-6A, -80V and -100V, 0.600 Ohm,
P-Channel Power MOSFETs
These are P-Channel enhancement mode silicon gate
power field effect transistors designed for high speed
applications such as switching regulators, switching
convertors, relay drivers, and drivers for high power bipolar
switching transistors.
Formerly developmental type TA09046.
Features
-6A, -80V and -100V
r
DS(ON)
= 0.600
SOA is Power Dissipation Limited
Nanosecond Switching Speeds
Linear Transfer Characteristics
High Input Impedance
Majority Carrier Device
Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
Packaging
JEDEC TO-220AB
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFP6P08
TO-220AB
RFP6P08
RFP6P10
TO-220AB
RFP6P10
NOTE: When ordering, include the entire part number.
G
D
S
SOURCE
DRAIN
DRAIN
(FLANGE)
GATE
Data Sheet
October 1999
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
www.intersil.com or 407-727-9207
|
Copyright
Intersil Corporation 1999
相關PDF資料 |
PDF描述 |
|---|---|
| RFP6P10 | -6A, -80V and -100V, 0.600 Ohm, P-Channel Power MOSFETs |
| RFP8P05 | 8A, 50V, 0.300 Ohm,N-Channel PowerMOSFET(8A, 50V, 0.300 Ohm,N溝道增強型功率MOS場效應管) |
| RFD8P05 | 8A, 50V, 0.300 Ohm, P-Channel Power MOSFETs |
| RFD8P05SM | 8A, 50V, 0.300 Ohm, P-Channel Power MOSFETs |
| RFP8P06E | 8A, 60V, 0.300 Ohm, P-Channel Power MOSFETs(8A, 60V, 0.300 Ω,P溝道功率MOS場效應管) |
相關代理商/技術參數 |
參數描述 |
|---|---|
| RFP70N03 | 功能描述:MOSFET TO-220AB N-Ch Power RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| RFP70N03R4349 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| RFP70N06 | 功能描述:MOSFET N-Ch Power MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| RFP70N06 | 制造商:Intersil Corporation 功能描述:MOSFET N TO-220 |
| RFP70N06 | 制造商:Fairchild Semiconductor Corporation 功能描述:PWR MOS 60V/70A/0.014 OHM N-CH TO-220AB |
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