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參數資料
型號: RFV10N50
廠商: Intersil Corporation
英文描述: 10A, 500V, Fast Switching N-Channel Enhancement-Mode Power MOSFETs
中文描述: 10A條的500V,快速切換N溝道增強型功率MOSFET
文件頁數: 1/6頁
文件大小: 66K
代理商: RFV10N50
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright
Harris Corporation 1995
1
S E M I C O N D U C T O R
RFV10N50BE
10A, 500V, Fast Switching N-Channel
Enhancement-Mode Power MOSFETs
Package
JEDEC STYLE 5 LEAD TO-247
Terminal Diagram
D
S
S
K
G
2
G
1
Features
10A, 500V
r
DS(ON)
= 0.480
Very Fast Turn-Off Characteristics
Nanosecond Switching Speeds
Electrostatic Discharge Protected
UIS Rating Curve
SOA is Power Dissipation Limited
High Input Impedance
Description
The RFV10N50BE is an N-Channel fast switching MOSFET transis-
tor that is designed for switching regulators, inverters and motor driv-
ers. The RFV10N50BE is a monolithic structure incorporating a high
voltage, high current MOSFET, a control MOSFET and ESD protec-
tion diodes. As indicated in the symbol to the right, the turn-on of the
main MOSFET is controlled by Gate 1 (G
1
). The control MOSFET,
controlled by Gate 2 (G
2
), is distributed throughout the structure. Gate
2 provides a very low impedance and inductive path to rapidly dis-
charge the gate of the main MOSFET. Gate 2 affords very fast turn-off
(typically less than 25ns) when desired. A separate return connection,
Source Kelvin (S
K
), is supplied for the gate drive circuit to avoid volt-
age induced transients from the output circuit during switching. The
RFV10N50BE can be operated directly from integrated circuits.
Formerly developmental type TA9881.
PACKAGE AVAILABILITY
PART NUMBER
RFV10N50BE
NOTE: When ordering use the entire part number.
PACKAGE
TO-247
BRAND
V10N50BE
File Number
3377.1
August 1995
Absolute Maximum Ratings
T
C
= +25
o
C
UNITS
V
V
V
KV
Drain Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
DSS
Gate Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
Control FET Gate Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
Electrostatic Discharge Rating, MIL-STD-883, Category B(2) . . . . . . . . . . . . . . . . . . . . . . . . . . ESD
Drain Current
RMS Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
Single Pulse Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .E
AS
Control FET Avalanche Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
AS
Control FET Single Pulse Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .E
AS
Power Dissipation
T
C
= +25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Derate Above +25
o
C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Control FET Power Dissipation
T
C
= +25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Derate Above +25
o
C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
STG
, T
J
500
+14, -0.3
+14, -0.3
2
10
25
A
A
Refer to UIS Curve
1.5
50
A
mJ
156
1.25
W
W/
o
C
21
0.17
W
W/
o
C
o
C
-55 to +150
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