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參數資料
| 型號： | RH1009 |
| 廠商： | Linear Technology Corporation |
| 英文描述： | 2.5V Reference |
| 中文描述： | 2.5V參考 |
| 文件頁數： | 1/2頁 |
| 文件大?。?/td> | 125K |
| 代理商： | RH1009 |
1
RH1009
2.5V Reference
T
J
= 25
°
C
TYP
SUB-
GROUP
1
SUB-
GROUP
SYMBOL PARAMETER
V
Z
Reverse Breakdown
Voltage
V
Z
Reverse Breakdown
I
R
Voltage Change with Current
r
Z
Reverse Dynamic
Impedance
V
Z
Temperature Stability
V
Z
Long Term Stability
Time
CONDITIONS
I
R
= 1mA
NOTES
MIN
2.495
MAX
2.505
MIN
TYP
MAX
UNITS
V
400
μ
A
≤
I
R
≤
10mA
6
1
10
2,3
mV
I
R
= 1mA
1
0.6
1
1
15
mV
T
A
= 25
°
C
±
0.1
°
C,
I
R
= 1mA
20
ppm/kHr
TABLE 1: ELECTRICAL CHARACTERISTICS
(Preirradiation)
–55
°
C
≤
T
J
≤
150
°
C
Reverse Breakdown Current ................................ 20mA
Forward Current................................................... 10mA
Operating Temperature Range............. –55
°
C to 125
°
C
Storage Temperature Range ................. –65
°
C to 150
°
C
Lead Temperature (Soldering, 10 sec)..................300
°
C
D
The RH1009 is a general purpose 2.5V shunt regulator
diode designed to operate over a wide current range while
maintaining good stability with time and temperature. The
adjust terminal allows either temperature coefficient to be
minimized or the reference voltage to be adjusted without
changing the temperature coefficient. Because it operates
as a shunt regulator it can be used equally well as a positive
or negative reference.
The wafer lots are processed to Linear Technology’s in-
house Class S flow to yield circuits usable in stringent
military applications.
U
ESCRIPTIO
A
U
G
W
A
W
U
W
A
R
BSOLUTE
XI
TI
S
, LTC and LT are registered trademarks of Linear Technology Corporation.
U
PACKAGE/ORDER U
BURU
U
2k
20V
RH1009 BI
NC
BOTTOM VIEW
ADJ
–
+
H PACKAGE
3-LEAD TO-46 METAL CAN
Information furnished by Linear Technology Corporation is believed to be accurate and reliable.
However, no responsibility is assumed for its use. Linear Technology Corporation makes no represen-
tation that the interconnection of its circuits as described herein will not infringe on existing patent rights.
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