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參數資料
型號: RL4Z
廠商: SANKEN ELECTRIC CO LTD
元件分類: 參考電壓二極管
英文描述: Ultra-Fast-Recovery Rectifier Diodes
中文描述: 3.5 A, 200 V, SILICON, RECTIFIER DIODE
封裝: AXIAL PACKAGE-2
文件頁數: 1/1頁
文件大小: 22K
代理商: RL4Z
Lead Temperature T (
°
C)
Lead Temperature T (
°
C)
T —I
F(AV)
Characteristics
6
±
0
1.2
±
0.05
5.2
±
0.2
Cathode Mark
9
±
0
V
=
V
RM
Ta
=
100
°
C max
Ultra-Fast-Recovery Rectifier Diodes
Parameter
Type No.
Absolute Maximum Ratings
I
(A)
Half-Single Shot
V
RM
(V)
I
F (AV)
V
F
(V)
I
F
(A)
I
/
I
RP
(mA)
I
/
I
RP
(mA)
V
R
=
V
RM
max
Rth (j-c)
I
R
(
μ
A)
I
R
(H)
(
μ
A)
Tj
(
°
C)
Tstg
(
°
C)
max
Electrical Characteristics (Ta
=
25
°
C)
(
°
C/W)
(g)
Mass
Others
RL 4Z
200
RL 4A
600
RX 3Z
200
3.0
3.5
80
0.95
1.5
0.98
10
3.5
150
3.0
50
500
100/200
100/200
500/1000
100/100
100/100
500/500
–40 to +150
35
25
50
30
8
1.2
10
1.0
B
A
0
25
Ambient Temperature Ta (
C)
50
75
100
125
150
0
1
2
3
4
5
1
5
50
10
20ms
I
F
RL 4Z
RL 4A
RX 3Z
80
60
40
20
0
1
5
50
10
20ms
I
F
80
60
40
20
0
Wt Hasn
Wthou Heatsnk
60
1
5
50
10
20ms
I
F
80
60
40
20
0
0.3
0.5
0.7
0.9
0.1
1.1
1.3
T
a
=
100oC
60oC
25oC
1
10
30
0.1
0.01
0.001
0.5
1.0
1.5
2.0
0
2.5
3.0
T
a
=
100oC
25oC
1
10
50
0.1
0.01
0.001
5
±
1
1.4
±
0.1
6.5
±
0.2
Cathode Mark
8
±
0
130
120
100
110
90
150
140
0
1.0
0.5
2.0
1.5
2.5
3.0
V
R
=200V
t/T=
t/T=
D.C.
t/T 1/6
=
Sinewave
130
120
110
100
150
140
0
1.0
0.5
2.0
0.5
2.5
3.0
t/T 1/3
=
t/T 1/2
=
D.C.
t/T=
Sinewave
t
T
100
(Tj
=
150
°
C)
54
Fig.
Forward Voltage V
F
(V)
F
F
(
V
F
—I
F
Characteristics
(Typical)
Overcurrent Cycles
I
FMS
Rating
P
F
(
A
F
(
Forward Voltage V
F
(V)
F
F
(
V
F
—I
F
Characteristics
(Typical)
Overcurrent Cycles
I
FMS
Rating
P
F
(
A
F
(
Ta—I
F(AV)
Derating
Overcurrent Cycles
I
FMS
Rating
P
F
(
A
F
(
External Dimensions
(Unit: mm)
Flammability:
UL94V-0 or Equivalent
A
Fig.
B
Fig.
t
(ns)
t
(ns)
T —I
F(AV)
Characteristics
Tj=150oC
V
R
=600V
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