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參數資料
| 型號： | RM10B |
| 廠商： | Electronics Industry Public Company Limited |
| 英文描述： | SILICON RECTIFIER DIODES |
| 中文描述： | 一般整流二極管 |
| 文件頁數： | 1/2頁 |
| 文件大小： | 39K |
| 代理商： | RM10B |
RM10 - RM10Z
SILICON RECTIFIER DIODES
PRV : 200 - 800 Volts
Io : 1.2 - 1.5 Amperes
FEATURES :
* High current capability
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
MECHANICAL DATA :
* Case : D2 Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.465 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25
°
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
SYMBOL
RM10Z
RM10
RM10A
RM10B
UNIT
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Current
0.375"(9.5mm) Lead Length Ta = 70
°
C
Peak Forward Surge Current
8.3ms Single half sine wave Superimposed
on rated load (JEDEC Method)
Maximum Forward Voltage at I
F
= 1.5 Amps.
Maximum DC Reverse Current Ta = 25
°
C
at rated DC Blocking Voltage Ta = 100
°
C
Typical Junction Capacitance (Note1)
Typical Thermal Resistance (Note2)
Junction Temperature Range
Storage Temperature Range
V
RRM
V
RMS
V
DC
200
140
200
400
280
400
600
420
600
800
560
800
Volts
Volts
Volts
I
F
1.5
1.2
Amps.
I
FSM
V
F
I
R
I
R(H)
C
J
R
θ
JA
T
J
T
STG
120
150
Amps.
Volts
μ
A
μ
A
pF
°
C/W
°
C
°
C
0.91
10
50
30
50
- 65 to + 175
- 65 to + 175
Notes :
(1) Measured at 1.0 MHz and applied reverse voltage of 4.0V
DC
(2) Thermal resistance from Junction to Ambient at 0.375" (9.5mm) Lead Lengths, P.C. Board Mounted.
UPDATE : MAY 27, 1998
RATING
0.034 (0.86)
0.028 (0.71)
D2
0.161 (4.10)
0.154 (3.90)
Dimensions in inches and ( millimeters )
0.284 (7.20)
0.268 (6.84)
1.00 (25.4)
MIN.
1.00 (25.4)
MIN.
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