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參數資料
| 型號： | RMBA19500A-TB |
| 廠商： | Fairchild Semiconductor Corporation |
| 英文描述： | PCS1900 2 Watt GaAs MMIC Power Amplifier |
| 中文描述： | PCS1900 2瓦特功率單片放大器的 |
| 文件頁數： | 1/7頁 |
| 文件大小： | 88K |
| 代理商： | RMBA19500A-TB |
2004 Fairchild Semiconductor Corporation
May 2004
RMBA19500A Rev. C
R
RMBA19500A
PCS1900 2 Watt GaAs MMIC Power Amplifier
General Description
The RMBA19500A is a highly linear Power Amplifier. The
two stage circuit uses our pHEMT process. It has been
designed for use as a driver stage for PCS1900 base
stations, or as the output stage for Micro- and Pico-Cell
base stations. The amplifier has been optimized for high
linearity requirements for PCS operation.
Features
2 Watt linear output power at 36 dBc ACPR1 for CDMA
operation
OIP3
≥
43 dBm at 27 and 30 dBm output
Small Signal Gain of > 30 dB
Small outline SMD package
Absolute Ratings
Electrical Characteristics
2
Notes:
1. Only under quienscent conditions—no RF applied.
2. V
= 7.0V, T
= 25°C. Part mounted on evaluation board with input and output matching to 50
3. 9 Channel Forward Link QPSK Source; 1.23 Mbps modulation rate. CDMA ACPR1 is measured using the ratio of the average power within the 1.23 MHz channel
at band center to the average power within a 30 KHz bandwidth at an 885 KHz offset. Minimum CDMA output power is met with ACPR1 > 36 dBc.
4. OIP3 specifications are achieved for power output levels of 27 and 30 dBm per tone with tone spacing of 1.25 MHz at band-center with adjusted supply and bias
conditions of Vdd = 6.5V and IdqTotal = 625mA (see Note 5).
5. VG1,2 and VG3 must be individually adjusted to achieve IDQ1,2 and IDQ3. A single VGG bias supply adjusted to achieve IDQTOTAL = 625mA can be used with
nearly equivalent performance. Values for IDQ1,2 and IDQ3 shown have been optimized for CDMA operation. IDQ1, 2 and IDQ3 (or IDQTOTAL) can be adjusted
to optimize the linearity of the amplifier for other modulation systems.
.
The device requires external input and output matching to 50
as shown in Figure 3 and the Parts List.
Symbol
Parameter
Ratings
+10
-5
+5
-30 to +85
-40 to +100
Units
V
V
dBm
°C
°C
Vd
Vg
P
T
C
T
STG
Drain Supply Voltage
Gate Supply Voltage (max absolute)
RF Input Power (from 50
Operating Case Temperature Range
Storage Temperature Range
1
IN
source)
Parameter
Min
1930
30
Typ
Max
1990
Units
MHz
dB
Frequency Range
Gain (Small Signal) Over 1930–1990 MHz
Gain Variation
Over Frequency Range
Over Temperature Range
Noise Figure
P1dB Output
Output Power @ CDMA
PAE @ 33 dBm Pout
OIP3
Drain Voltage (Vdd)
Gate Voltage (VG1, 2 and VG3)
Quiescent currents (Idq1, 2 and Idq3)
Thermal Resistance (Channel to Case) R
±1.0
±1.5
6
30
dB
dB
dB
dBm
dBm
%
dBm
V
V
mA
°C/W
3
33
24
45
7.0
4
43
5
-2
-0.25
5
180, 445
11
JC
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