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參數資料
| 型號： | RMPA0963 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 衰減器 |
| 英文描述： | Cellular CDMA, CDMA2000-1X and WCDMA Power Amplifier Module |
| 中文描述： | 824 MHz - 849 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER |
| 封裝： | 4 X 4 MM, 1.50 MM HEIGHT, LEAD FREE, LCC-10 |
| 文件頁數： | 1/7頁 |
| 文件大小： | 128K |
| 代理商： | RMPA0963 |
2005 Fairchild Semiconductor Corporation
RMPA0963
i-Lo
Rev. E
1
www.fairchildsemi.com
April 2005
R
iL
o
RMPA0963
i-Lo
Cellular CDMA, CDMA2000-1X and WCDMA
Power Amplifier Module
Features
■
38% CDMA/WCDMA efficiency at +28 dBm Pout
■
14% CDMAA/WCDMA efficiency (80 mA total current) at
+16 dBm Pout
■
Meets HSDPA performance requirements
■
Linear operation in low-power mode up to +19 dBm
■
50% AMPS mode efficiency at +31 dBm Pout
■
Low quiescent current (Iccq): 20 mA in low-power mode
■
Single positive-supply operation with low power and
shutdown modes
3.4V typical Vcc operation
Low Vref (2.85V) compatible with advanced handset
chipsets
■
Compact Lead-free compliant LCC package –
(4.0 X 4.0 x 1.5 mm nominal)
■
Industry standard pinout
■
Internally matched to 50 Ohms and DC blocked RF
input/output
■
Meets IS-95/CDMA2000-1XRTT/WCDMA performance
requirements
General Description
The RMPA0963 Power Amplifier Module (PAM) is Fairchild’s lat-
est innovation in 50 Ohm matched, surface mount modules tar-
geting Cellular CDMA/WCDMA/HSDPA, AMPS and Wireless
Local Loop (WLL) applications. Answering the call for ultra-low
DC power consumption and extended battery life in portable
electronics, the RMPA0963 uses novel proprietary circuitry to
dramatically reduce amplifier current at low to medium RF out-
put power levels (< +16 dBm), where the handset most often
operates. A simple two-state Vmode control is all that is needed
to reduce operating current by more than 50% at 16 dBm output
power, and quiescent current (Iccq) by as much as 70% com-
pared to traditional power-saving methods. No additional cir-
cuitry, such as DC-to-DC converters, are required to achieve
this remarkable improvement in amplifier efficiency. Further, the
4x4x1.5 mm LCC package is pin-compatible and a drop-in
replacement for last generation 4x4 mm PAMs widely used
today, minimizing the design time to apply this performance-
enhancing technology. The multi-stage GaAs Microwave Mono-
lithic Integrated Circuit (MMIC) is manufactured using Fairchild
RF’s InGaP Heterojunction Bipolar Transistor (HBT) process.
Device
Functional Block Diagram
Vref
Vmode
RF IN
GND
Vcc1
RF OUT
GND
GND
GND
7
6
8
9
10
4
3
2
BIAS/MODE SWITCH
11 (paddle ground on package bottom)
1
5
Vcc2
INPUT
MATCH
OUTPUT
MATCH
MMIC
(Top View)
PRELIMINARY
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相關代理商/技術參數 |
參數描述 |
|---|---|
| RMPA0965 | 功能描述:射頻放大器 CDMA-CDMA2000-1X Pwr Edge Amp Mod RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點:37.5 dBm 功率增益類型:32 dB 噪聲系數:0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
| RMPA0966 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:WCDMA Band V Power Amplifier Module |
| RMPA0966_07 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:WCDMA Band V Power Amplifier Module |
| RMPA0967 | 功能描述:射頻放大器 CDMA2000-1X-WCDMA Pwr Edge Amp Mod RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點:37.5 dBm 功率增益類型:32 dB 噪聲系數:0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
| RMPA0967_06 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Cellular CDMA, CDMA2000-1X and WCDMA Power Edg TM Power Amplifier Module |
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