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參數資料
型號: RMPA5255
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: 衰減器
英文描述: 4.9-5.9 GHz WLAN Linear Power Amplifier Module
中文描述: 4900 MHz - 5900 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
封裝: 5 X 5 MM, 1.50 MM HEIGHT, LEAD FREE, LEADLESS PACKAGE-10
文件頁數: 1/7頁
文件大小: 788K
代理商: RMPA5255
2005 Fairchild Semiconductor Corporation
RMPA5255 Rev. E
1
www.fairchildsemi.com
September 2005
R
RMPA5255
4.9–5.9 GHz WLAN Linear Power Amplifier Module
Features
Full 4.9 to 5.9 GHz operation
34 dB small signal gain
230 mA total current at 18 dBm modulated power out
2.3% EVM at 18 dBm modulated power out
3.3 V collector supply voltage
Integrated power detector with 20 dB dynamic range
RoHS compliant 5 x 5 x 1.5 mm leadless package
Internally matched to 50
and DC blocked RF
input/output
Internal DC bias de-coupling
Optimized for use in 802.11a applications
Description
The RMPA5255 power amplifier module is designed for high
performance WLAN applications in the 4.9–5.9 GHz frequency
band. The 10 pin, 5 x 5 x 1.5 mm package with internal match-
ing on both input and output to 50
components, allow for extremely simplified integration. An on-
chip detector provides power sensing capability. The PA’s low
power consumption and excellent linearity are achieved using
our InGaP Heterojunction Bipolar Transistor (HBT) technology.
, and internal bias network
Device
Electrical Characteristics
(176 μs burst time, 100 μs idle time) 54 Mbps Data Rate, 16.7 MHz Bandwidth
Parameter
Frequency
Collector Supply Voltage
Mirror Supply Voltage
Mirror Supply Current
Gain
Total Current @ 18dBm Pout
EVM @ 18dBm Pout
Detector Output @ 18dBm Pout
Detector Threshold
1
802.11a OFDM Modulation
Notes:
1.
2.
3.
VCC
Percentage includes system noise floor of EVM
P
OUT
measured at P
IN
corresponding to power detection threshold.
=
3.3V, VPC
=
2.9V, T
=
25°C, PA is constantly biased, 50
system.
=
0.8%.
Min
4.9
3.0
Typ
Max
5.9
3.6
Units
GHz
V
V
mA
dB
mA
%
mV
dBm
3.3
2.9
26
33
230
2.3
450
5
2
3
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