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參數資料
| 型號： | RMWB33001 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 衰減器 |
| 英文描述： | 33 GHz Buffer Amplifier MMIC |
| 中文描述： | 32000 MHz - 35000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| 封裝： | 3 X 1.20 MM, DIE |
| 文件頁數： | 1/6頁 |
| 文件大小： | 234K |
| 代理商： | RMWB33001 |
2004 Fairchild Semiconductor Corporation
June 2004
RMWB33001 Rev. C
R
RMWB33001
33 GHz Buffer Amplifier MMIC
General Description
The RMWB33001 is a 4-stage GaAs MMIC amplifier
designed as a 33 GHz Buffer Amplifier for use in point to
point and point to multi-point radios, and various communi-
cations applications. In conjunction with other Fairchild RF
amplifiers, multipliers and mixers it forms part of a complete
38 GHz transmit/receive chipset. The RMWB33001 utilizes
our 0.25μm power PHEMT process and is sufficiently
versatile to serve in a variety of medium power amplifier
applications.
Features
4 mil Substrate
Small-signal Gain 24dB (typ.)
Saturated Power Out 19dBm (typ.)
Voltage Detector Included to Monitor Pout
Chip size 3.2mm x 1.2mm
Absolute Ratings
Symbol
Parameter
Ratings
+6
-2
8
173
+8
-30 to +85
-55 to +125
130
Units
V
V
V
mA
dBm
°C
°C
°C/W
Vd
Vg
Vdg
I
D
P
IN
T
C
T
STG
R
JC
Positive DC Voltage (+4V Typical)
Negative DC Voltage
Simultaneous (Vd–Vg)
Positive DC Current
RF Input Power (from 50
Operating Baseplate Temperature
Storage Temperature Range
Thermal Resistance (Channel to Backside)
source)
Device
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