
S
AV7
200
1
-02-02
1
/3
TOSHIBA RF POWER AMPLIFIER MODULE
S
AV7
VHF HAM FM RF POWER AMPLIFIER MODULE
High Gain : Po
≥
28W, G
P
≥
2
1
.4dB,
η
T
≥
45%
MAXIMUM RATINGS
(Tc = 25°C)
CHARACTERISTIC
SYMBOL
RATING
UNIT
DC Supply Voltage
V
CC
1
6
V
DC Supply Voltage
V
CON
1
6
V
Input Power
Pi
300
mW
Operating Case Temperature Range
T
c (opr)
30~
1
00
°C
Storage Temperature Range
T
stg
40~
11
0
°C
ELECTRICAL CHARACTERISTICS
(Tc = 25°C)
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Frequency Range
f
range
—
1
44
—
1
48
MHz
Output Power
Po
28
33
—
W
Power Gain
G
P
2
1
.4
22.2
—
dB
Total Efficiency
η
T
45
52
—
%
Input VSWR
VSWR
in
—
1
.5
2
—
Harmonics
HRM
Pi = 200mW
V
CC
=
1
2.5V, V
CON
=
1
2.5V
Z
G
= Z
L
= 50
—
30
25
dB
Load Mismatch
—
V
CC
=
1
5V, V
CON
=
1
2.5V
Po = 30W (Pi = adjust)
VSWR load 20:
1
all phase
No Degradation
—
Power Slump
—
Tc =
30~80°C, V
CC
=
1
2.5V
Pi = 200mW, Po = 28W
(@Tc = 25°C)
—
0.8
—
dB
Stability
—
V
CC
=
1
2.5V, Pi = 200mW
V
CON
= 0~
1
2.5V
VSWR load 3:
1
all phase
All spurious output than
60dB below desired
signal
—
JEDEC
EIAJ
TOSHIBA
Weight: 35g
—
—
5
53P
Unit in mm
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general
can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the
buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and
to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or
damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the
most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling
Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc..
000707EAA2