- 您現在的位置：買賣IC網 > PDF目錄368517 > RM11B (Electronics Industry Public Company Limited) SILICON RECTIFIER DIODES PDF資料下載
參數資料
| 型號： | RM11B |
| 廠商： | Electronics Industry Public Company Limited |
| 英文描述： | SILICON RECTIFIER DIODES |
| 中文描述： | 一般整流二極管 |
| 文件頁數： | 1/2頁 |
| 文件大小： | 39K |
| 代理商： | RM11B |
RM11A - RM11C
SILICON RECTIFIER DIODES
PRV : 600 - 1000 Volts
Io : 1.2 Amperes
FEATURES :
* High current capability
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
MECHANICAL DATA :
* Case : D2 Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.465 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25
°
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
SYMBOL
V
RRM
V
RMS
V
DC
RM11A
600
420
600
RM11B
800
560
800
RM11C
1000
700
1000
UNITS
V
V
V
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Current
0.375"(9.5mm) Lead Length Ta = 70
°
C
Peak Forward Surge Current
8.3ms Single half sine wave Superimposed
on rated load (JEDEC Method)
Maximum Forward Voltage at I
F
= 1.5 Amps.
Maximum DC Reverse Current Ta = 25
°
C
at rated DC Blocking Voltage Ta = 100
°
C
Typical Junction Capacitance (Note1)
Typical Thermal Resistance (Note2)
Junction Temperature Range
Storage Temperature Range
V
F
I
R
I
R(H)
C
J
R
θ
JA
T
J
T
STG
0.92
10
50
30
50
V
μ
A
μ
A
pF
°
C/W
°
C
°
C
- 65 to + 175
- 65 to + 175
Notes :
(1) Measured at 1.0 MHz and applied reverse voltage of 4.0V
DC
(2) Thermal resistance from Junction to Ambient at 0.375" (9.5mm) Lead Lengths, P.C. Board Mounted.
Page 1 of 2
Rev. 01 : Mar 23, 2002
RATING
I
F
1.2
A
A
100
I
FSM
0.034 (0.86)
0.028 (0.71)
D2
0.161 (4.10)
0.154 (3.90)
Dimensions in inches and ( mllimeters )
0.284 (7.20)
0.268 (6.84)
1.00 (25.4)
MIN.
1.00 (25.4)
MIN.
相關PDF資料 |
PDF描述 |
|---|---|
| RM11C | SILICON RECTIFIER DIODES |
| RM2207D | Voltage Controlled Oscillator |
| RM2A | SILICON RECTIFIER DIODES |
| RM2Z | SILICON RECTIFIER DIODES |
| RM2B | SILICON RECTIFIER DIODES |
相關代理商/技術參數 |
參數描述 |
|---|---|
| RM11C | 制造商:Sanken Electric Co Ltd 功能描述: |
| RM12 | 制造商:MCC 制造商全稱:Micro Commercial Components 功能描述:500 Milliamp High Voltage Silicon Rectifier 1200 to 2000 Volts |
| RM-12 | 制造商:DBLECTRO 制造商全稱:DB Lectro Inc 功能描述:Surface Mouting Type Dip Swith |
| RM12/I-3C90 | 制造商:FERROXCUBE 功能描述:FERRITE CORE RM/I 3C90 制造商:Yageo / Ferroxcube 功能描述:FERRITE CORE, RM/I, 3C90 制造商:FERROXCUBE 功能描述:FERRITE CORE, RM/I, 3C90; Core Size:RM12/I; Material Grade:3C90; Series:RM; Effective Magnetic Path Length:56.6mm; Ae Effective Cross Section Area:146mm2; Inductance Factor Al:5600nH; SVHC:No SVHC (18-Jun-2012); External Length / ;RoHS Compliant: Yes |
| RM12/I-3C95 | 制造商:Yageo / Ferroxcube 功能描述:FERRITE CORE RM/I 3C95 制造商:Yageo / Ferroxcube 功能描述:FERRITE CORE, RM/I, 3C95 制造商:Yageo / Ferroxcube 功能描述:FERRITE CORE, RM/I, 3C95, Core Size:RM12/I, Material Grade:3C95, Effective Magnetic Path Length:56.6mm, Ae Effective Cross Section Area:146mm2, Inductance Factor Al:6790nH, SVHC:No SVHC (20-Jun-2013), Ferrite Case Style:RM Core , RoHS Compliant: Yes |
發布緊急采購，3分鐘左右您將得到回復。