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參數資料
| 型號： | S1210xH |
| 廠商： | 意法半導體 |
| 英文描述： | The S12xxxH series of SCRs uses a high performance MESA |
| 中文描述： | 在可控硅S12xxxH系列采用高性能的梅薩 |
| 文件頁數： | 1/5頁 |
| 文件大?。?/td> | 61K |
| 代理商： | S1210XH |
S12xxxH
January 1995
SCR
Symbol
Parameter
Value
Unit
I
T(RMS)
RMS on-state current
(180
°
conductionangle)
Tc=90
°
C
12
A
I
T(AV)
Averageon-state current
(180
°
conductionangle)
Tc=90
°
C
7.6
A
I
TSM
Non repetitivesurge peak on-statecurrent
(T
j
initial= 25
°
C )
tp = 8.3 ms
132
A
tp = 10 ms
120
I
2
t
I
2
t Value for fusing
tp = 10 ms
72
A
2
s
dI/dt
Critical rate of rise of on-state current
I
G
= 100mA
di
G
/dt = 1 A/
μ
s.
100
A/
μ
s
T
stg
T
j
Storageand operatingjunction temperaturerange
- 40, + 150
- 40, + 125
°
C
Tl
Maximum lead temperaturefor soldering during 10s at
4.5mm fromcase
260
°
C
ABSOLUTE RATINGS
(limitingvalues)
TO220
non-insulated
(Plastic)
I
T(RMS)
= 12A
V
DRM
= 200Vto 800V
High surge current capability
FEATURES
Symbol
Parameter
Voltage
Unit
B
D
M
N
V
DRM
V
RRM
Repetitivepeak off-statevoltage
T
j
=125
°
C
200
400
600
800
V
The S12xxxH series of SCRs uses a high
performance MESA GLASS PNPN technology.
These parts are intended for general purpose
applications.
DESCRIPTION
K
G
A
1/5
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