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參數資料
| 型號： | S1226-44BK |
| 元件分類： | 光敏二極管 |
| 英文描述： | PHOTO DIODE |
| 封裝： | TO-5, 2 PIN |
| 文件頁數： | 1/3頁 |
| 文件大小： | 337K |
| 代理商： | S1226-44BK |
Features
l High UV sensitivity: QE 75 % (λ=200 nm)
l Suppressed IR sensitivity
l Low dark current
l High reliability
Applications
l Analytical equipment
l Optical measurement equipment, etc.
PHOTODIODE
Si photodiode
For UV to visible, precision photometry; suppressed IR sensitivity
S1226 series
s General ratings / absolute maximum ratings
Absolute maximum ratings
Package
Active
area size
Effective
active area
Reverse
voltage
VR Max.
Operating
temperature
Topr
Storage
temperature
Tstg
Type No.
Dimensional
outline/
Window
material *
(mm)
(mm
2)
(V)
(°C)
S1226-18BQ
/Q
-20 to +60
-55 to +80
S1226-18BK
/K
TO-18
1.1 × 1.1
1.2
-40 to +100
-55 to +125
S1226-5BQ
/Q
-20 to +60
-55 to +80
S1226-5BK
/K
2.4 × 2.4
5.7
-40 to +100
-55 to +125
S1226-44BQ
/Q
-20 to +60
-55 to +80
S1226-44BK
/K
TO-5
3.6 × 3.6
13
-40 to +100
-55 to +125
S1226-8BQ
/Q
-20 to +60
-55 to +80
S1226-8BK
/K
TO-8
5.8 × 5.8
33
5
-40 to +100
-55 to +125
s Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted)
Photo sensitivity
S
(A/W)
Short circuit
current
Isc
100 lx
Spectral
response
range
λ
Peak
sensi-
tivity
wave-
length
λp
200 nm
He-Ne
laser
Min. Typ.
Dark
current
ID
VR=10 m V
Max.
Temp.
coeffi-
cient
of ID
TCID
Rise time
tr
VR=0 V
RL=1 k
Terminal
capaci-
tance
Ct
VR=0 V
f=10 kHz
Shunt
resistance
Rsh
VR=10 m V
NEP
Type No.
(nm)
Min. Typ. 633 nm
(A) (A)
(pA)
(times/° C)
(s)
(pF)
Min.
(G
)
Typ.
(G
) (W/Hz1/2)
S1226-18BQ
190 to 1000
0.10 0.12
S1226-18BK
320 to 1000
--
0.5
0.66
2
0.15
35
5
50 1.6 × 10
-15
S1226-5BQ
190 to 1000
0.10 0.12
S1226-5BK
320 to 1000
--
2.2
2.9
5
0.5
160
2
20 2.5 × 10
-15
S1226-44BQ
190 to 1000
0.10 0.12
S1226-44BK
320 to 1000
--
4.4
5.9
10
1
380
1
10 3.6 × 10
-15
S1226-8BQ
190 to 1000
0.10 0.12
S1226-8BK
320 to 1000
720
0.36
--
0.34
12
16
20
1.12
2
950
0.5 5 5.0 × 10
-15
* Window material, K: borosilicate glass, Q: quartz glass
1
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相關代理商/技術參數 |
參數描述 |
|---|---|
| S1226-44BQ | 制造商:HAMAMATSU 制造商全稱:Hamamatsu Corporation 功能描述:Si photodiode For UV to visible, precision photometry; suppressed IR sensitivity |
| S1226-5BK | 制造商:HAMAMATSU 制造商全稱:Hamamatsu Corporation 功能描述:SI PHOTO DIODE |
| S1226-5BQ | 制造商:HAMAMATSU 制造商全稱:Hamamatsu Corporation 功能描述:SI PHOTO DIODE |
| S1226-8BK | 制造商:HAMAMATSU 制造商全稱:Hamamatsu Corporation 功能描述:Si photodiode For UV to visible, precision photometry; suppressed IR sensitivity |
| S1226-8BQ | 制造商:HAMAMATSU 制造商全稱:Hamamatsu Corporation 功能描述:SI PHOTO DIODE |
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