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參數(shù)資料
| 型號： | S1336-8BK |
| 元件分類： | 光敏二極管 |
| 英文描述： | PHOTO DIODE |
| 封裝： | TO-8, 2 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 340K |
| 代理商： | S1336-8BK |
Features
q High sensitivity
q Low capacitance
q High reliability
Applications
q Analytical instruments
q Optical measurement equipment
PHOTODIODE
Si photodiode
UV to near IR for precision photometry
S1336 series
s General ratings / Absolute maximum ratings
Absolute maximum rating
Package
Active
area size
Effective
active area
Reverse voltage
VR Max.
Operating
temperature
Topr
Storage
temperature
Tstg
Type No.
Dimensional
outline/
Window
material *
(mm)
(mm
2)
(V)
(°C)
S1336-18BQ
/Q
-20 to +60
-55 to +80
S1336-18BK
/K
TO-18
1.1 × 1.1
1.2
-40 to +100
-55 to +125
S1336-5BQ
/Q
-20 to +60
-55 to +80
S1336-5BK
/K
2.4 × 2.4
5.7
-40 to +100
-55 to +125
S1336-44BQ
/Q
-20 to +60
-55 to +80
S1336-44BK
/K
TO-5
3.6 × 3.6
13
-40 to +100
-55 to +125
S1336-8BQ
/Q
-20 to +60
-55 to +80
S1336-8BK
/K
TO-8
5.8 × 5.8
33
5
-40 to +100
-55 to +125
s Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted)
Photo sensitivity
S (A/W)
Short circuit
current
Isc
100 lx
Spectral
response
range
λ
Peak
sensi-
tivity
wave-
length
λp
200 nm
He-N e
laser
Min.
Typ.
Dark
current
ID
V R=10 m V
Max.
Temp.
coeffi-
cient
of ID
TCID
Rise time
tr
V R=0 V
R L=1 k
Terminal
capaci-
tance
Ct
V R=0 V
f=1 0 kH z
Shunt
resistance
Rsh
V R=10 m V
NEP
Type No.
(nm)
λp
Min. Typ.
633
nm
(A)
(pA)
(tim e s/°C )
(s)
(pF)
Min.
(G
)
Typ.
(G
) (W/Hz1/2)
S1336-18BQ 190 to 1100
0.10 0.12
S1336-18BK 320 to 1100
-
1
1.2
20
0.1
20
0.5
2
5.7 × 10
-15
S1336-5BQ 190 to 1100
0.10 0.12
S1336-5BK
320 to 1100
-
4
5
30
0.2
65
0.3
1
8.1 × 10
-15
S1336-44BQ 190 to 1100
0.10 0.12
S1336-44BK 320 to 1100
-
8
10
50
0.5
150
0.2
0.6 1.0 × 10
-14
S1336-8BQ 190 to 1100
0.10 0.12
S1336-8BK
320 to 1100
960
0.5
--
0.33
22
28
100
1.15
1
380
0.1
0.4 1.3 × 10
-14
* Window material, K: borosilicate glass, Q: quartz glass
1
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| S1336-8BQ | 制造商:HAMAMATSU 制造商全稱:Hamamatsu Corporation 功能描述:Si photodiode UV to near IR for precision photometry |
| S1337 | 制造商:HAMAMATSU 制造商全稱:Hamamatsu Corporation 功能描述:Si photodiode For UV to IR, precision photometry |
| S1337-1010BQ | 制造商:MISCELLANEOUS 功能描述: |
| S1337-1010BR | 制造商:HAMAMATSU 功能描述:PHOTODIODE 960NM |
| S1337-16BQ | 制造商:HAMAMATSU 制造商全稱:Hamamatsu Corporation 功能描述:Si photodiode For UV to IR, precision photometry |
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