- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄31007 > S1GB-7 (DIODES INC) 1 A, 400 V, SILICON, SIGNAL DIODE PDF資料下載
參數(shù)資料
| 型號(hào)： | S1GB-7 |
| 廠商： | DIODES INC |
| 元件分類(lèi)： | 二極管(射頻、小信號(hào)、開(kāi)關(guān)、功率) |
| 英文描述： | 1 A, 400 V, SILICON, SIGNAL DIODE |
| 封裝： | PLASTIC, SMB, 2 PIN |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大?。?/td> | 85K |
| 代理商： | S1GB-7 |
DS16003 Rev. 8 - 2
1 of 2
S1A/B - S1M/B
S1A/B - S1M/B
1.0A SURFACE MOUNT GLASS PASSIVATED RECTIFIER
Features
Maximum Ratings and Electrical Characteristics TA = 25°C unless otherwise specified
Glass Passivated Die Construction
Low Forward Voltage Drop and High Current
Capability
Surge Overload Rating to 30A Peak
Ideally Suited for Automated Assembly
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Symbol
S1
A/AB
S1
B/BB
S1
D/DB
S1
G/GB
S1
J/JB
S1
K/KB
S1
M/MB
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
50
100
200
400
600
800
1000
V
RMS Reverse Voltage
VR(RMS)
35
70
140
280
420
560
700
V
Average Rectified Output Current
@ TT = 100
°C
IO
1.0
A
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on rated load
(JEDEC Method)
IFSM
30
A
Forward Voltage
@ IF = 1.0A
VFM
1.1
V
Peak Reverse Leakage Current
@ TA = 25
°C
at Rated DC Blocking Voltage
@ TA = 125
°C
IRM
5.0
100
mA
Typical Total Capacitance
(Note 1)
CT
10
pF
Typical Thermal Resistance, Junction to Terminal (Note 2)
RqJT
30
°C/W
Operating and Storage Temperature Range
Tj, TSTG
-65 to +150
°C
A, B, D, G, J, K, M Suffix Designates SMA Package
AB, BB, DB, GB, JB, KB, MB Suffix Designates SMB Package
Notes:
1. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
2. Thermal Resistance Junction to Terminal, unit mounted on PC board with 5.0 mm2 (0.013 mm thick) copper pads as heat sink.
Mechanical Data
Case: Molded Plastic
Case Material - UL Flammability Rating
Classification 94V-0
Moisture sensitivity: Level 1 per J-STD-020A
Terminals: Solder Plated Terminal -
Solderable per MIL-STD-202, Method 208
Polarity: Cathode Band or Cathode Notch
SMA Weight: 0.064 grams (approx.)
SMB Weight: 0.093 grams (approx.)
Marking: Type Number, See Page 2
Ordering Information: See Page 2
SMA
SMB
Dim
Min
Max
Min
Max
A
2.29
2.92
3.30
3.94
B
4.00
4.60
4.06
4.57
C
1.27
1.63
1.96
2.21
D
0.15
0.31
0.15
0.31
E
4.80
5.59
5.00
5.59
G
0.10
0.20
0.10
0.20
H
0.76
1.52
0.76
1.52
J
2.01
2.62
2.00
2.62
All Dimensions in mm
A
B
C
D
G
H
E
J
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| S1MB-7 | 1 A, 1000 V, SILICON, SIGNAL DIODE |
| S1J-7 | 1 A, 600 V, SILICON, SIGNAL DIODE |
| S1D-7 | 1 A, 200 V, SILICON, SIGNAL DIODE |
| S1G-7 | 1 A, 400 V, SILICON, SIGNAL DIODE |
| S1B | 1 A, 100 V, SILICON, SIGNAL DIODE, DO-214AA |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| S1GBT | 制造商:Vishay Intertechnologies 功能描述: |
| S1G-CUT TAPE | 制造商:FAIRCHILD 功能描述:S1 Series 400 V 1 A 1 uA Surface Mount General Purpose Rectifier - DO-214AC |
| S1G-E3 | 制造商:Vishay Semiconductors 功能描述:DIODE STANDARD 1 A DO-214AC 制造商:Vishay Semiconductors 功能描述:DIODE, STANDARD, 1 A, DO-214AC |
| S1G-E3 | 制造商:Vishay Semiconductors 功能描述:STANDARD RECOVERY RECTIFIER |
| S1G-E3/1 | 功能描述:DIODE GP 1A 400V SMA RoHS:是 類(lèi)別:分離式半導(dǎo)體產(chǎn)品 >> 單二極管/整流器 系列:- 標(biāo)準(zhǔn)包裝:100 系列:- 二極管類(lèi)型:標(biāo)準(zhǔn) 電壓 - (Vr)（最大）:50V 電流 - 平均整流 (Io):6A 電壓 - 在 If 時(shí)為正向 (Vf)（最大）:1.4V @ 6A 速度:快速恢復(fù) = 200mA（Io） 反向恢復(fù)時(shí)間(trr):300ns 電流 - 在 Vr 時(shí)反向漏電:15µA @ 50V 電容@ Vr, F:- 安裝類(lèi)型:底座，接線柱安裝 封裝/外殼:DO-203AA，DO-4，接線柱 供應(yīng)商設(shè)備封裝:DO-203AA 包裝:散裝 其它名稱(chēng):*1N3879 |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。