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參數資料
型號: S29CD032G0JQAN000
廠商: SPANSION LLC
元件分類: DRAM
英文描述: CMOS 2.5 VOLT ONLY BURST MODE DUAL BOOT, SIMULTANEOUS READ /WRITE FLASH MEMORY
中文描述: 1M X 32 FLASH 2.7V PROM, 67 ns, PQFP80
封裝: PLASTIC, MO-108CB-1, QFP-80
文件頁數: 1/93頁
文件大小: 1608K
代理商: S29CD032G0JQAN000
Publication Number
30606
Revision
B
Amendment
0
Issue Date
March 22, 2004
ADVANCE
INFORMATION
The contents of this document are subject to change without notice. This document may contain information on a Spansion product under development by
FASL LLC. FASL LLC reserves the right to change or discontinue work on any product without notice. The information in this document is provided
as is
without warranty or guarantee of any kind as to its accuracy, completeness, operability, fitness for particular purpose, merchantability, non-infringement of
S29CD032G
32 Megabit (1 M x 32-Bit)
CMOS 2.5 Volt-only Burst Mode, Dual Boot,
Simultaneous Read/Write Flash Memory
Data Sheet
Distinctive Characteristics
Architecture Advantages
Simultaneous Read/Write operations
— Data can be read from one bank while executing
erase/program functions in other bank
(-40°C to 85°C only)
— Zero latency between read and write operations
— Two bank architecture: 75%/25%
User-Defined x32 Data Bus
Dual Boot Block
— Top and bottom boot sectors in the same device
Flexible sector architecture
— Eight 8 Kbytes, sixty-two 64 Kbytes, and eight 8
Kbytes sectors
Manufactured on 170 nm process technology
SecSi (Secured Silicon) Sector (256 Bytes)
Factory locked and identifiabl
e: 16 bytes for secure,
random factory Electronic Serial Number; remainder
may be customer data programmed by AMD
Customer lockable:
Can be read, programmed or
erased just like other sectors. Once locked, data
cannot be changed
Programmable Burst interface
— Interface to any high performance processor
— Modes of Burst Read Operation:
Linear Burst
: 4 double words and 8 double words
with wrap around
Program Operation
— Ability to perform synchronous and asynchronous
write operations of burst configuration register
settings independently
Single power supply operation
— Optimized for 2.5 to 2.75 volt read, erase, and
program operations
Compatibility with JEDEC standards (JC42.4)
— Software compatible with single-power supply Flash
— Backward-compatible with AMD Am29LV and Am29F
flash memories
Performance Characteristics
High performance read access
— Initial/random access times as fast as 48 ns
— Burst access time as fast as 7.5 ns for ball grid array
package
Ultra low power consumption
— Burst Mode Read: 90 mA @ 66 MHz max, capable of
75 MHz (Fortified BGA only)
— Program/Erase: 50 mA max
— Standby mode: CMOS: 60 μA max
1 million write cycles per sector typical
20 year data retention typical
VersatileI/O control
— Device generates data output voltages and tolerates
data input voltages as determined by the voltage on
the V
IO
pin
— 1.65 V to 2.75 V compatible I/O signals
Software Features
Persistent Sector Protection
— A command sector protection method to lock
combinations of individual sectors and sector groups
to prevent program or erase operations within that
sector (requires only V
CC
levels)
Password Sector Protection
— A sophisticated sector protection method to lock
combinations of individual sectors and sector groups
to prevent program or erase operations within that
sector using a user-definable 64-bit password
Supports Common Flash Interface (CFI)
Unlock Bypass Program Command
— Reduces overall programming time when issuing
multiple program command sequences
Data# Polling and toggle bits
— Provides a software method of detecting program or
erase operation completion
Hardware Features
Program Suspend/Resume & Erase Suspend/
Resume
— Suspends program or erase operations to allow
reading, programming, or erasing in same bank
Hardware Reset (RESET#), Ready/Busy# (RY/
BY#), and Write Protect (WP#) inputs
ACC input
— Accelerates programming time for higher throughput
during system production
Package options
— 80-pin PQFP
— 80-ball Fortified BGA
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