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參數(shù)資料
型號： S29GL032A10TAIR20
廠商： SPANSION LLC
元件分類： PROM
英文描述： 64 MEGABIT 32MEGABIT 3.0 BOLT ONLY PAGE MODE FLASH MEMORY
中文描述： 2M X 16 FLASH 3V PROM, 100 ns, PDSO56
封裝： MO-142EC, TSOP-56
文件頁數(shù)： 51/95頁
文件大?。?/td> 3585K
代理商： S29GL032A10TAIR20
May 21, 2008 S29GL-A_00_A12
S29GL-A
55
Data
She e t
Write an Address/Data pair to a different write-buffer-page than the one selected by the Starting Address
during the write buffer data loading stage of the operation.
Write data other than the Confirm Command after the specified number of data load cycles.
The abort condition is indicated by DQ1 = 1, DQ7 = DATA# (for the last address location loaded), DQ6 =
toggle, and DQ5= 0. A Write-to-Buffer-Abort Reset command sequence must be written to reset the device
for the next operation.
Note that the Secured Silicon Sector, autoselect, and CFI functions are unavailable when a program
operation is in progress. This flash device is capable of handling multiple write buffer programming operations
on the same write buffer address range without intervening erases. For applications requiring incremental bit
programming, a modified programming method is required; please contact your local Spansion
representative. Any bit in a write buffer address range cannot be programmed from 0 back to a 1.
Attempting to do so may cause the device to set DQ5=1, of cause the DQ7 and DQ6 status bits to indicate
the operation was successful. However, a succeeding read shows that the data is still 0. Only erase
operations can convert a 0 to a 1.
9.4.4
Accelerated Program
The device offers accelerated program operations through the WP#/ACC or ACC pin depending on the
particular product. When the system asserts VHH on the WP#/ACC or ACC pin. The device uses the higher
voltage on the WP#/ACC or ACC pin to accelerate the operation. Note that the WP#/ACC pin must not be at
VHH for operations other than accelerated programming, or device damage may result. WP# contains an
internal pull-up; when unconnected, WP# is at VIH.
Figure 9.1 on page 56 illustrates the algorithm for the program operation. Refer to the Erase and Program
Operations–AC Characteristics on page 72 for parameters, and Figure 16.3 on page 74 for timing diagrams.
相關(guān)PDF資料
PDF描述
S29GL032A10TAIR22 64 MEGABIT 32MEGABIT 3.0 BOLT ONLY PAGE MODE FLASH MEMORY
S29GL032A11BFIR32 64 MEGABIT 32MEGABIT 3.0 BOLT ONLY PAGE MODE FLASH MEMORY
S29GL032A11BFIR33 64 MEGABIT 32MEGABIT 3.0 BOLT ONLY PAGE MODE FLASH MEMORY
S29GL032A11BFIR40 64 MEGABIT 32MEGABIT 3.0 BOLT ONLY PAGE MODE FLASH MEMORY
S29GL032A11BFIR42 64 MEGABIT 32MEGABIT 3.0 BOLT ONLY PAGE MODE FLASH MEMORY
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
S29GL032A10TAIR21 制造商:SPANSION 制造商全稱:SPANSION 功能描述:64 MEGABIT 32MEGABIT 3.0 BOLT ONLY PAGE MODE FLASH MEMORY
S29GL032A10TAIR22 制造商:SPANSION 制造商全稱:SPANSION 功能描述:64 MEGABIT 32MEGABIT 3.0 BOLT ONLY PAGE MODE FLASH MEMORY
S29GL032A10TAIR23 制造商:SPANSION 制造商全稱:SPANSION 功能描述:64 MEGABIT 32MEGABIT 3.0 BOLT ONLY PAGE MODE FLASH MEMORY
S29GL032A10TAIR30 制造商:SPANSION 制造商全稱:SPANSION 功能描述:64 MEGABIT 32MEGABIT 3.0 BOLT ONLY PAGE MODE FLASH MEMORY
S29GL032A10TAIR31 制造商:SPANSION 制造商全稱:SPANSION 功能描述:64 MEGABIT 32MEGABIT 3.0 BOLT ONLY PAGE MODE FLASH MEMORY
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