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參數資料
| 型號： | S29GL032A11BFIR32 |
| 廠商： | SPANSION LLC |
| 元件分類： | PROM |
| 英文描述： | 64 MEGABIT 32MEGABIT 3.0 BOLT ONLY PAGE MODE FLASH MEMORY |
| 中文描述： | 2M X 16 FLASH 3V PROM, 110 ns, PBGA48 |
| 封裝： | 8.15 X 6.15 MM, LEAD FREE, FBGA-48 |
| 文件頁數： | 58/95頁 |
| 文件大小： | 3585K |
| 代理商： | S29GL032A11BFIR32 |
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May 21, 2008 S29GL-A_00_A12
S29GL-A
61
Data
She e t
10.2
Command Definitions
Figure 10.2 Command Definitions (x16 Mode, BYTE# = VIH)
Command
Sequence
Cy
c
les
Bus Cycles (Notes 2–5)
First
Second
Third
Fourth
Fifth
Sixth
Read (Note 5)
1RA
RD
Reset (Note 6)
1XXX
F0
A
u
to
sel
e
ct
) Manufacturer ID
4
555
AA
2AA
55
555
90
X00
0001
Device ID (Note 8)
6
555
AA
2AA
55
555
90
X01
227E
X0E
X0F
Device ID (Note 9)
4
555
AA
2AA
55
555
90
X01
Secured Silicon Sector Factory Protect
4
555
AA
2AA
55
555
90
X03
Sector Group Protect Verify
4
555
AA
2AA
55
555
90
(SA)X02
00/01
Enter Secured Silicon Sector Region
3
555
AA
2AA
55
555
88
Exit Secured Silicon Sector Region
4
555
AA
2AA
55
555
90
XXX
00
Program
4
555
AA
2AA
55
555
A0
PA
PD
Write to Buffer (Note 12)
3
555
AA
2AA
55
SA
25
SA
WC
PA
PD
WBL
PD
Program Buffer to Flash
1
SA
29
Write to Buffer Abort Reset (Note 13)
3
555
AA
2AA
55
555
F0
Unlock Bypass
3
555
AA
2AA
55
555
20
Unlock Bypass Program (Note 14)
2
XXX
A0
PA
PD
Unlock Bypass Reset (Note 15)
2XXX
90
XXX
00
Chip Erase
6
555
AA
2AA
55
555
80
555
AA
2AA
55
555
10
Sector Erase
6
555
AA
2AA
55
555
80
555
AA
2AA
55
SA
30
Program/Erase Suspend (Note 16)
1XXX
B0
Program/Erase Resume (Note 17)
1XXX
30
CFI Query (Note 18)
155
98
Legend
X = Don’t care
RA = Read Address of memory location to be read.
RD = Read Data read from location RA during read operation.
PA = Program Address. Addresses latch on falling edge of WE# or CE# pulse,
whichever happens later.
PD = Program Data for location PA. Data latches on rising edge of WE# or CE#
pulse, whichever happens first.
SA = Sector Address of sector to be verified (in autoselect mode) or erased.
Address bits A21–A15 uniquely select any sector.
WBL = Write Buffer Location. Address must be within same write buffer page as
PA.
WC = Word Count. Number of write buffer locations to load minus 1.
Notes
1. See Table 7.1 on page 22 for description of bus operations.
2. All values are in hexadecimal.
3. Shaded cells indicate read cycles. All others are write cycles.
4. During unlock and command cycles, when lower address bits are 555 or
2AA as shown in table, address bits above A11 and data bits above DQ7 are
don’t care.
5. No unlock or command cycles required when device is in read mode.
6. Reset command is required to return to read mode (or to erase-suspend-
read mode if previously in Erase Suspend) when device is in autoselect
mode, or if DQ5 goes high while device is providing status information.
7. Fourth cycle of the autoselect command sequence is a read cycle. Data bits
DQ15–DQ8 are don’t care. Except for RD, PD and WC. See Autoselect
Command Sequence on page 53 for more information.
8. For S29GL064A and S29GL032A, Device ID must be read in three cycles.
9. For S29GL016A, Device ID must be read in one cycle.
10. Refer to Table 7.12 on page 40 for data indicating Secured Silicon Sector
factory protect status.
11. Data is 00h for an unprotected sector group and 01h for a protected sector
group.
12. Total number of cycles in command sequence is determined by number of
words written to write buffer. Maximum number of cycles in command
sequence is 21, including Program Buffer to Flash command.
13. Command sequence resets device for next command after aborted write-to-
buffer operation.
14. Unlock Bypass command is required prior to Unlock Bypass Program
command.
15. Unlock Bypass Reset command is required to return to read mode when
device is in unlock bypass mode.
16. System may read and program in non-erasing sectors, or enter autoselect
mode, when in Erase Suspend mode. Erase Suspend command is valid only
during a sector erase operation.
17. Erase Resume command is valid only during Erase Suspend mode.
18. Command is valid when device is ready to read array data or when device is
in autoselect mode.
19. Refer to Table 7.12 on page 40, for individual Device IDs per device density
and model number.
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