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參數資料
型號: S29GL032M10FAIR40
廠商: SPANSION LLC
元件分類: PROM
英文描述: MirrorBit Flash Family
中文描述: 2M X 16 FLASH 3V PROM, 100 ns, PBGA64
封裝: 13 X 11 MM, FORTIFIED, BGA-64
文件頁數: 113/116頁
文件大小: 6024K
代理商: S29GL032M10FAIR40
94
S29GL-M MirrorBitTM Flash Family
S29GL-M_00_B8 February 7, 2007
Data
Sheet
Alternate CE# Controlled Erase and Program Operations—S29GL128M
Notes:
1. Not 100% tested.
2. See See Erase and Programming Performance for more information
3. For 1–16 words/1–32 bytes programmed.
4. If a program suspend command is issued within tPOLL, the device requires tPOLL before reading
status data, once programming resumes (that is, the program resume command has been
written). If the suspend command was issued after tPOLL, status data is available immediately
after programming resumes. See Figure 24.
Parameter
Description
Speed Options
Unit
JEDEC
Std.
10
11
tAVAV
tWC
Write Cycle Time (Note 1)
Min
100
110
ns
tAVWL
tAS
Address Setup Time
Min
0
ns
tELAX
tAH
Address Hold Time
Min
45
ns
tDVEH
tDS
Data Setup Time
Min
45
ns
tEHDX
tDH
Data Hold Time
Min
0
ns
tGHEL
Read Recovery Time Before Write (OE# High to WE# Low)
Min
0
ns
tWLEL
tWS
WE# Setup Time
Min
0
ns
tEHWH
tWH
WE# Hold Time
Min
0
ns
tELEH
tCP
CE# Pulse Width
Min
35
ns
tEHEL
tCPH
CE# Pulse Width High
Min
25
ns
tWHWH1
Write Buffer Program Operation (Notes 2, 3)
Typ
240
s
Single Word Program Operation (Note 2)
Typ
60
Accelerated Single Word Program Operation (Note 2)
Typ
54
tWHWH2
Sector Erase Operation (Note 2)
Typ
0.5
sec
tRH
RESET# High Time Before Write
Min
50
ns
tPOLL
Program Valid before Status Polling (Note 4)
Max
4
s
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S29GL032M10FFIR22 Conductive Polymer Chip Capacitors / T530 Series - High Capacitance/Ultra-Low ESR; Capacitance [nom]: 1500uF; Working Voltage (Vdc)[max]: 2.5V; Capacitance Tolerance: +/-20%; Dielectric: Conductive Polymer; ESR: 5.0mΩ; Lead Style: Surface-Mount Chip; Lead Dimensions: 7343-43; Termination: 100% Tin (Sn); Body Dimensions: 7.3mm x 4.3mm x 4mm; Temperature Range: -55C to +125C; Container: Tape & Reel; Qty per Container: 500; Features: High Capacitance; Ultra-Low ESR
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