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參數資料
型號: S2J-HE3/5BT
廠商: VISHAY SEMICONDUCTORS
元件分類: 整流器
英文描述: 1.5 A, 600 V, SILICON, RECTIFIER DIODE, DO-214AA
封裝: ROHS COMPLIANT, PLASTIC, SMB, 2 PIN
文件頁數: 1/4頁
文件大小: 87K
代理商: S2J-HE3/5BT
S2A thru S2M
Vishay General Semiconductor
Document Number: 88712
Revision: 08-Apr-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
Surface Mount Glass Passivated Rectifier
FEATURES
Low profile package
Ideal for automated placement
Glass passivated chip junction
Low forward voltage drop
Low leakage current
High forward surge capability
Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
Solder dip 260 °C, 40 s
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For
use
in
general
purpose
rectification
of
power
supplies,
inverters,
converters
and
freewheeling diodes for consumer, automotive and
telecommunication.
MECHANICAL DATA
Case: DO-214AA (SMB)
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test, HE3 suffix for high reliability grade
(AEC Q101 qualified), meets JESD 201 class 2
whisker test
Polarity: Color band denotes cathode end
PRIMARY CHARACTERISTICS
IF(AV)
1.5 A
VRRM
50 V to 1000 V
IFSM
50 A
IR
1.0 A
VF
1.15 V
TJ max.
150 °C
DO-214AA (SMB)
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
S2A
S2B
S2D
S2G
S2J
S2K
S2M
UNIT
Device marking code
SA
SB
SD
SG
SJ
SK
SM
Maximum repetitive peak reverse voltage
VRRM
50
100
200
400
600
800
1000
V
Maximum RMS voltage
VRMS
35
70
140
280
420
560
700
V
Maximum DC blocking voltage
VDC
50
100
200
400
600
800
1000
V
Maximum average forward rectified current at TL= 100 °C
IF(AV)
1.5
A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
50
A
Operating and storage temperature range
TJ, TSTG
- 55 to + 150
°C
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PDF描述
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相關代理商/技術參數
參數描述
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