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參數資料
| 型號： | S3590-09 |
| 元件分類： | 光敏二極管 |
| 英文描述： | PIN PHOTO DIODE |
| 封裝： | CERAMIC PACKAGE-2 |
| 文件頁數： | 2/2頁 |
| 文件大小： | 110K |
| 代理商： | S3590-09 |
Si PIN photodiode
S3590-08/-09
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvgen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein.
Type numbers of products listed inthe specification sheets or supplied as samples may have a suffix "(X)" which means tentative specifications or a suffix "(Z)"
which means developmental specifications. 2010 Hamamatsu Photonics K.K.
0.45
LEAD
PHOTOSENSITIVE
SURFACE
ACTIVE AREA
5.0
±
0.2
1.25
10
1.78
±
0.2
0.7
10.0
WHITE CERAMIC
14.5
1.4
12.7
+
0
-0.5
+0
- 0.5
The coating resin may extend a
maximum of 0.1 mm beyond the
upper surface of the package.
Cat. No. KPIN1052E07
Mar. 2010 DN
WAVELENGTH (nm)
PHOTO
SENSITIVITY
(A/W)
0
200
400
600
0.1
0.2
0.3
0.4
0.5
800
1200
1000
0.6
0.7
(Typ. Ta=25 C)
0
TEMPERATURE
COEFFICIENT
(
%/
C
)
200
400
600
800
1000
+1.0
+0.5
(Typ.)
+1.5
-0.5
WAVELENGTH (nm)
REVERSE VOLTAGE (V)
(Typ. Ta=25 C, f=1 MHz)
TERMINAL
CAPACITANCE
1
0.1
10 pF
100 pF
10 nF
1 nF
10
100
1000
s Spectral response
REVERSE VOLTAGE (V)
DARK
CURRENT
100 pA
0.1
1
10
1000
100
1 nA
10 nA
100 nA
(Typ. Ta=25 C)
10 nA
1 A
10 pA
100 pA
1 nA
100 nA
DARK
CURRENT
(Typ. VR=70 V)
AMBIENT TEMPERATURE (C)
060
80
20
40
s Dimensional outline (unit: mm)
s Photo sensitivity temperature
characteristic
s Dark current vs. reverse voltage
s Dark current vs. ambient temperature s Terminal capacitance vs.
reverse voltage
KPINB0231EB
KPINB0093ED
KPINB0233ED
KPINB0232EC
KPINB0234EC
KPINA0014EF
KPINB0263EB
WAVELENGTH (nm)
PHOTO
SENSITIVITY
(A/W)
0
200
400
600
0.1
0.2
0.3
0.4
0.5
800
1200
1000
0.6
0.7
(Typ. Ta=25 C)
QE=100 %
2
S3590-09
S3590-08
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