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參數(shù)資料
| 型號： | S3GHE3/57T |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 整流器 |
| 英文描述： | 3 A, 400 V, SILICON, RECTIFIER DIODE, DO-214AB |
| 封裝： | ROHS COMPLIANT, PLASTIC, SMC, 2 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 79K |
| 代理商： | S3GHE3/57T |
S3A thru S3M
Vishay General Semiconductor
Document Number: 88713
Revision: 08-Apr-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
Surface Mount Glass Passivated Rectifier
FEATURES
Low profile package
Ideal for automated placement
Glass passivated chip junction
Low forward voltage drop
Low leakage current
High forward surge capability
Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
Solder dip 260 °C, 40 s
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For
use
in
general
purpose
rectification
of
power
supplies,
inverters,
converters
and
freewheeling diodes for consumer, automotive and
telecommunication.
MECHANICAL DATA
Case: DO-214AB (SMC)
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test, HE3 suffix for high reliability grade
(AEC Q101 qualified), meets JESD 201 class 2
whisker test
Polarity: Color band denotes cathode end
PRIMARY CHARACTERISTICS
IF(AV)
3.0 A
VRRM
50 V to 1000 V
IFSM
100 A
IR
10 A
VF
1.15 V
TJ max.
150 °C
DO-214AB (SMC)
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
S3A
S3B
S3D
S3G
S3J
S3K
S3M
UNIT
Device marking code
SA
SB
SD
SG
SJ
SK
SM
Maximum recurrent peak reverse voltage
VRRM
50
100
200
400
600
800
1000
V
Maximum RMS voltage
VRMS
35
70
140
280
420
560
700
V
Maximum DC blocking voltage
VDC
50
100
200
400
600
800
1000
V
Maximum average forward rectified current at TL= 103 °C
IF(AV)
3.0
A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
100
A
Operating junction and storage temperature range
TJ, TSTG
- 55 to + 150
°C
相關(guān)PDF資料 |
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| SMB10J10HE3/52 | 1000 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA |
| SMB8J33CHE3/52 | 800 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA |
| SMB8J36CHE3/52 | 800 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA |
| SB1280-TP | 12 A, 80 V, SILICON, RECTIFIER DIODE, DO-201AD |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| S3GR6 | 制造商:Taiwan Semiconductor 功能描述:Diode Switching 400V 3A 2-Pin DO-214AB |
| S3G-T | 功能描述:整流器 400V 3A RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| S3G-T1 | 制造商:WTE 制造商全稱:Won-Top Electronics 功能描述:3.0A SURFACE MOUNT GLASS PASSIVATED RECTIFIER |
| S3G-T3 | 制造商:WTE 制造商全稱:Won-Top Electronics 功能描述:3.0A SURFACE MOUNT GLASS PASSIVATED STANDARD DIODE |
| S3G-TP | 功能描述:整流器 400V 3A RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
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