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參數資料
型號: S4PB-G3/86A
廠商: VISHAY SEMICONDUCTORS
元件分類: 整流器
英文描述: 4 A, 100 V, SILICON, RECTIFIER DIODE, TO-277A
封裝: GREEN, PLASTIC, SMPC, 3 PIN
文件頁數: 1/5頁
文件大小: 106K
代理商: S4PB-G3/86A
New Product
S4PB thru S4PM
Vishay General Semiconductor
Document Number: 89032
Revision: 30-Jul-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
High Current Density Surface Mount
Glass Passivated Rectifiers
FEATURES
Very low profile - typical height of 1.1 mm
Ideal for automated placement
Glass passivated chip junction
Low forward voltage drop
High forward surge capability
Meets MSL level 1, per J-STD-020, LF
maximum peak of 260 °C
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Halogen-free
MECHANICAL DATA
Case: TO-277A (SMPC)
Molding compound meets UL 94V-0 flammability
rating.
Base P/N-E3 - RoHS compliant, commercial grade
Base P/NHE3 - RoHS compliant, high reliability/
automotive grade (AEC-Q101 qualified)
Base P/N-M3 - halogen-free and RoHS compliant,
commercial grade
Base P/NHM3 - halogen-free and RoHS compliant,
high reliability/automotive grade (AEC-Q101 qualified)
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 and M3 suffix meets JESD 201 class 1A whisker
test, HE3 and HM3 suffix meets JESD 201 class 2
whisker test
TYPICAL APPLICATIONS
For use in general purpose rectification of power
supplies, inverters, converters and freewheeling diodes
for consumer, automotive and telecommunication.
PRIMARY CHARACTERISTICS
IF(AV)
4.0 A
VRRM
100 V to 1000 V
IFSM
100 A
IR
10 A
VF at IF = 4 A
0.860 V
TJ max.
150 °C
TO-277A (SMPC)
Anode 1
Anode 2
Cathode
K
K
2
1
eSMPTM Series
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
S4PB
S4PD
S4PG
S4PJ
S4PK
S4PM
UNIT
Device marking code
S4PB
S4PD
S4PG
S4PJ
S4PK
S4PM
Maximum repetitive peak reverse voltage
VRRM
100
200
400
600
800
1000
V
Average forward current
IF(AV)
4.0
A
Peak forward surge current 10 ms single half
sine-wave superimposed on rated load
IFSM
100
A
Operating junction and storage temperature range
TJ, TSTG
- 55 to + 150
°C
相關PDF資料
PDF描述
S4PDHE3/86A 4 A, 200 V, SILICON, RECTIFIER DIODE, TO-277A
S4PDHG3/86A 4 A, 200 V, SILICON, RECTIFIER DIODE, TO-277A
S4PM-E3/87A 4 A, 1000 V, SILICON, RECTIFIER DIODE, TO-277A
S4PJ-G3/87A 4 A, 600 V, SILICON, RECTIFIER DIODE, TO-277A
S4PK-G3/86A 4 A, 800 V, SILICON, RECTIFIER DIODE, TO-277A
相關代理商/技術參數
參數描述
S4PBHE3/86A 功能描述:整流器 4.0 Amp 100 Volt RoHS:否 制造商:Vishay Semiconductors 產品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel
S4PBHE3/87A 功能描述:整流器 4.0 Amp 100 Volt RoHS:否 制造商:Vishay Semiconductors 產品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel
S4PBHM3/86A 功能描述:整流器 4.0 Amp 100 Volt RoHS:否 制造商:Vishay Semiconductors 產品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel
S4PBHM3/87A 功能描述:整流器 4.0 Amp 100 Volt RoHS:否 制造商:Vishay Semiconductors 產品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel
S4PB-M3/86A 功能描述:整流器 4.0 Amp 100 Volt RoHS:否 制造商:Vishay Semiconductors 產品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel
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