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參數(shù)資料
| 型號： | S6786 |
| 元件分類： | 光敏二極管 |
| 英文描述： | PIN PHOTO DIODE |
| 封裝： | 7 X 7.80 MM, PLASTIC, SIP-2 |
| 文件頁數(shù)： | 2/2頁 |
| 文件大小： | 106K |
| 代理商： | S6786 |
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvgen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. 2006 Hamamatsu Photonics K.K.
Si PIN photodiode
S2506/S6775/S6967 series, S6786
Cat. No. KPIN1048E02
Jun. 2006 DN
s
s Dimensional outline (unit: mm, tolerance unless otherwise noted: ±0.1)
s Spectral response
AMBIENT TEMPERATURE (C)
DARK
CURRENT
1 pA
10 pA
100 pA
1 nA
10 nA
10 A
-20
0
20
40
60
(Typ.)
80
100 nA
1 A
S6786 (VR=10 V)
S2506-02/-04 (VR=12 V)
S6775/-01, S6967/-01 (VR=10 V)
S6786
S2506-02/-04
S6967/-01
S6775/-01
1 pF
10 pF
100 pF
1 nF
0.1
1
10
100
REVERSE VOLTAGE (V)
TERMINAL
CAPACITANCE
(Typ. Ta=25 C, f=1 MHz)
1 pF
10 pF
100 pF
1 nF
0.1
1
10
100
(Typ. Ta=25 C, f=1 MHz)
S6967/-01
S6775/-01
S2506-02/-04
S6786
1.0
0.5
3.5 ± 0.2
7.0 ± 0.2
7.8
±
0.2
(6.45)
a
2.3
±
0.3
5.08
(0.3)
(0.5)
(0.4)
(0.6)
1.0
14.3
±
1
CENTER OF
ACTIVE AREA
DETAILS OF LEAD ROOT
ACTIVE AREA
b
2.7 ± 0.2 0.2 MAX.
0.5
1.4
1.1
INCIDENT LIGHT
5.0
a
Type No.
3.65 ± 0.2
S6775/S6967
series
2.8 ± 0.2
b
5.5 × 4.8
2.77 × 2.77
S2506 series
S6786
s Dark current vs. ambient temperature s Terminal capacitance vs.
reverse voltage
KPINB0169EB
KPINB0170EB
KPINA0084EB
90
80
70
60
50
30
RELATIVE SENSITIVITY
40
20
10
0
10
20
90
80
70
60
50
30
40
80 %
100 %
20 %
40 %
60 %
(Typ. Ta=25 C)
s Directivity (S2506-02)
KPINB0065EB
REVERSE VOLTAGE (V)
DARK
CURRENT
1 pA
10 pA
100 pA
1 nA
10 nA
0.01
0.1
1
10
100
(Typ. Ta=25 C)
S6786
S6967/-01
S2506-02/-04
S6775/-01
s Dark current vs. reverse voltage
KPINB0168EB
WAVELENGTH (nm)
TEMPERATURE
COEFFICIENT
(
%
/
C
)
0
200
400
600
800
1000
+1.0
+0.5
(Typ.)
+1.5
-0.5
s Photo sensitivity temperature characteristic
(S2506-02)
KPINB0063EC
WAVELENGTH (nm)
PHOTO
SENSITIVITY
(A/W)
0
0.1
0.2
0.3
0.4
0.8
0.7
200
400
600
800
1000
(Typ. Ta=25 C)
0.5
0.6
S2506-04
S2506-02
S6786
QE=100 %
KPINB0348EA
WAVELENGTH (nm)
PHOTO
SENSITIVITY
(A/W)
0
0.1
0.2
0.3
0.4
0.8
0.7
200
400
600
800
1000
(Typ. Ta=25 C)
0.5
0.6
S6967
S6967-01
QE=100 %
S6775
S6775-01
KPINB0349EA
S2506 series, S6786
S6775/S6967 series
2
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