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參數(shù)資料
| 型號(hào)： | S6A13 |
| 廠商： | Toshiba Corporation |
| 英文描述： | TOSHIBA Thyristor Silicon Planar Type |
| 中文描述： | 東芝硅平面型晶閘管 |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大小： | 137K |
| 代理商： | S6A13 |
S6A13
2002-01-23
1
TOSHIBA Thyristor Silicon Planar Type
S6A13
Condenser Discharge Control Applications
FWD included between cathode and anode
Critical rate of rise of ON-state current: di/dt = 750 A/μs
Repetitive peak surge ON-state current: I
TRM
= 500 A (t
w
= 2 μs)
Repetitive peak OFF-state voltage: V
DRM
= 800 V
Gate trigger current: I
GT
= 30 mA max.
Maximum Ratings
Characteristics
Symbol
Rating
Unit
Repetitive peak OFF-state voltage
V
DRM
800
V
Repetitive peak surge ON-state
current
(Note)
I
TRM
500
A
Repetitive peak surge forward current
(Note)
I
FRM
500
A
Critical rate of rise of ON-state current
(Note)
di/dt
750
A/ s
Peak gate power dissipation
P
GM
5
W
Average gate power dissipation
P
G (AV)
0.5
W
Peak forward gate voltage
V
FGM
10
V
Peak reverse gate voltage
V
RGM
5
V
Peak forward gate current
I
GM
2
A
Junction temperature
T
j
40~125
°C
Storage temperature range
T
stg
40~150
°C
Note: V
D
0.8 rated, Tc 85°C, i
gp
60 mA, t
gw
10 s, t
gr
150 ns
Marking
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
13-10J1B
Weight: 1.5 g (typ.)
※
1
MARK
S6A13
TYPE NAME
S6A13
※
2
Lot Number
Month (starting from alphabet A)
Year (last decimal digit of the current year)
※
2
※
1
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