- 您現在的位置：買賣IC網 > PDF目錄299879 > S6X8TS1 SCR PDF資料下載
參數資料
| 型號： | S6X8TS1 |
| 元件分類： | 晶閘管 |
| 英文描述： | SCR |
| 封裝： | SOT-223, 4 PIN |
| 文件頁數： | 1/10頁 |
| 文件大小： | 297K |
| 代理商： | S6X8TS1 |
173
2008 Littelfuse, Inc.
Revised: July 9, 2008
Teccor brand Thyristors
Specications are subject to change without notice.
Please refer to http://www.littelfuse.com for current information.
Specications are subject to change without notice.
Please refer to http://www.littelfuse.com for current information.
SxX8xSx Series
EV Series 0.8 Amp Sensitive SCRs
EV
0.8
A
SCRs
New device series offers high static dv/dt and lower turn
off (t
q) sensitive SCR with its small die planar construction
design. It is specically designed for GFCI (Ground Fault
Circuit Interrupter) and Gas Ignition applications. All
SCRs junctions are glass-passivated to ensure long term
reliability and parametric stability.
SxX8xSx Series
Description
Features
Absolute Maximum Ratings
Symbol
Parameter
Value
Unit
I
T(RMS)
RMS on-state current (full sine wave)
TO-92
T
C = 55°C
0.8
A
SOT-89
T
C = 60°C
0.8
A
SOT-223
T
L = 60°C
0.8
A
I
T(AV)
Average on-state current
TO-92
T
C = 55°C
0.51
A
SOT-89
T
C = 60°C
0.51
A
SOT-223
T
L = 60°C
0.51
A
I
TSM
Non repetitive surge peak on-state current
(Single cycle, T
J initial = 25°C)
TO-92
SOT-89
SOT-223
F= 50Hz
8
A
F= 60Hz
10
A
I2tI2t Value for fusing
t
p = 10 ms
F = 50 Hz
0.32
A2s
t
p = 8.3 ms
F = 60 Hz
0.41
A2s
di/dt
Critical rate of rise of on-state current I
G = 10mA
TO-92
SOT-89
SOT-223
T
J = 125°C
50
A/μs
I
GM
Peak Gate Current
t
p = 10 μs
T
J = 125°C
1.0
A
P
G(AV)
Average gate power dissipation
—
T
J = 125°C
0.1
W
T
stg
Storage junction temperature range
—
-40 to 150
°C
T
J
Operating junction temperature range
—
-40 to 125
°C
Main Features
Symbol
Value
Unit
I
T(RMS)
0.8
A
V
DRM /VRRM
400 to 800
V
I
GT
5 to 200
μA
A
K
G
Schematic Symbol
The SxX8xSx EV series is specically designed for
GFCI (Ground Fault Circuit Interrupter) and gas ignition
applications.
Applications
mount packages
capability > 10Amps
( V
DRM / VRRM )
capability - up to 800V
q)
< 25 μsec
microprocessor interface
相關PDF資料 |
PDF描述 |
|---|---|
| S6X8TS2 | SCR |
| S6X8TSRP | 0.8 A, 600 V, SCR |
| S6X8TS | SCR |
| S8X8BS1RP1 | SCR |
| S8X8BS1RP | SCR |
相關代理商/技術參數 |
參數描述 |
|---|---|
| S6X8TS1RP | 功能描述:SCR Sen SCR 600V .8A 5 uA RoHS:否 制造商:STMicroelectronics 最大轉折電流 IBO:480 A 額定重復關閉狀態電壓 VDRM:600 V 關閉狀態漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態 RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| S6X8TS2 | 制造商:LITTELFUSE 制造商全稱:Littelfuse 功能描述:EV Series 0.8A Sensitive SCR |
| S6X8TS2RP | 功能描述:SCR Sen SCR 600V .8A 50uA RoHS:否 制造商:STMicroelectronics 最大轉折電流 IBO:480 A 額定重復關閉狀態電壓 VDRM:600 V 關閉狀態漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態 RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| S6X8TSRP | 功能描述:SCR Sen SCR 600V .8A 200uA RoHS:否 制造商:STMicroelectronics 最大轉折電流 IBO:480 A 額定重復關閉狀態電壓 VDRM:600 V 關閉狀態漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態 RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| S7 | 功能描述:機架和機柜配件 #4 X 9/16 SCREW RoHS:否 制造商:Bivar 產品:Rack Accessories 面板空間: 顏色:Black |
發布緊急采購，3分鐘左右您將得到回復。