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參數資料
| 型號： | S7797 |
| 元件分類： | 光敏二極管 |
| 英文描述： | PIN PHOTO DIODE |
| 文件頁數： | 2/2頁 |
| 文件大小： | 134K |
| 代理商： | S7797 |
Si PIN photodiode
S7797, S5052, S8255, S5573
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, http://www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvgen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. 2001 Hamamatsu Photonics K.K.
Cat.No.KPIN1047E01
Apr. 2001 DN
Chip position accuracy with respect to the
package dimension marked *
X, Y
≤±0.2
θ≤±2
6
8
4.2 MAX.
(INCLUDINGBURR)
3.8 *
3.0
5.2
MAX.
(INCLUDING
BURR)
1.9
2.9
(1.3
)
(0.8)
4.8
*
9.2
±
1.0
1.2
0.45
2.54
0.45
8
6
0.7
2.2 ± 0.15
4.0 ± 0.2
R1.5
LENS CENTER
0
0.1
0.2
0.3
0.4
0.7
200
400
600
800
1000
WAVELENGTH (nm)
PHOTO
SENSITIVITY
(A/W)
(Typ. Ta=25 C)
0.5
0.6
S5052
S7797
S5573, S8255
s Spectral response
s Dark current vs. reverse voltage
KPINB0176EA
100 fA
1 pA
10 pA
100 pA
0.01
0.1
1
10
100
REVERSE VOLTAGE (V)
DARK
CURRENT
(Typ. T
a=25 C)
S5573
S5052
S8255
S7797
KPINB0177EA
1 pA
10 pA
100 pA
1 nA
10 nA
-20
0
20
40
60
AMBIENT TEMPERATURE (C)
DARK
CURRENT
(Typ.)
80
100 nA
S5573 (VR=5 V)
S5052 (VR=5 V)
S8255 (VR=5 V)
S7797 (VR=2.5 V)
s Dark current vs. ambient temperature
s Terminal capacitance vs. reverse voltage
1 pF
10 pF
0.1
1
10
100
REVERSE VOLTAGE (V)
TERMINAL
CAPACITANCE
S8255
S5573
S5052
S7797
(Typ. Ta=25 C, f=1 MHz)
90
80
70
60
50
30
RELATIVE SENSITIVITY
40
20
10
0
10
20
90
80
70
60
50
30
40
80 %
20 %
40 %
60 %
(Typ. Ta=25 C)
100 %
S5573
S8255
S5052
S7797
s Directivity
KPINB0178EA
KPINB0179EA
KPINB0180EA
KPINA0032EA
s Dimensional outline
(unit: mm, tolerance unless otherwise noted: ±0.1)
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