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參數(shù)資料
| 型號： | S9747 |
| 廠商： | Toshiba Corporation |
| 英文描述： | Microwave Power GaAs MMIC(功率砷化鎵單片微波集成電路) |
| 中文描述： | 微波功率GaAs微波單片集成電路（功率砷化鎵單片微波集成電路） |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 211K |
| 代理商： | S9747 |
TOSHIBA
TOSHIBA CORPORATION
MW20070196
1/3
MICROWAVE POWER GaAs MMIC
S9747
The information contained here is subject to change without notice.
The information contained herein is presented only as guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties
which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. These TOSHIBA products are intended for usage in general electronic
equipments (office equipment, communication equipment, measuring equipment, domestic electrification, etc.) Please make sure that you consult with us before you use these TOSHIBA products in equip-
ments which require high quality and/or reliability, and in equipments which could have major impact to the welfare of human life (atomic energy control, spaceship, traffic signal, combustion control, all types
of safety devices, etc.). TOSHIBA cannot accept liability to any damage which may occur in case these TOSHIBA products were used in the mentioned equipments without prior consultation with TOSHIBA.
Features
High power
- Po = 26 dBm at Pin = 5 dBm
Super low distortion
- P
adj
= -62 dBc at Po = 25 dBm, 600 kHz offset
High gain
- Gp = 21 dB at Pin = 5 dBm
Input/output port matched to 50
Hermetically sealed package
RF Performance Specifications (T
a
= 25
°
C)
*I
DD
= I
DD1
+ I
DD2
Characteristic
Symbol
Condition
Unit
Min.
Typ.
Max.
Output Power
Po
V
DD1
= -5V, f = 1.9 GHz
Pin = 5 dBm
= V
DD2
= 6V
V
GG
dBm
25
26
–
Power Gain
Gp
dB
20
21
–
Drain Current
I
DD
*
mA
–
280
350
Adjacent Channel Leakage Power
P
adj
V
DD1
= -5V, f = 1.9 GHz
Po = 25 dBm
/ 4-QPSK Modulation
600 kHz Offset
= V
DD2
= 6V
V
GG
π
dBc
–
-62
-60
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