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參數(shù)資料
| 型號(hào)： | S9868 |
| 元件分類： | 光敏二極管 |
| 英文描述： | PIN PHOTO DIODE |
| 封裝： | 3 X 4.50 MM, 1.50 MM HEIGHT, MINIATURE PACKAGE-6 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 110K |
| 代理商： | S9868 |
S9868 is a PIN photodiode developed for optical pick-up laser monitor compatible with violet laser beams. One piece of S9868 allows monitoring
of violet (405 nm), red (660 nm) and near infrared (780 nm) laser beams used for 3-wavelength optical pick-up heads. S9868 delivers high
sensitivity in the violet region (QE=92 % at 405 nm), with no decrease in sensitivity even after continuously irradiated with violet laser (405 nm).
S9868 also offers a fast settling time that is greatly improved compared to previously available devices. In particular, the trailing edge of response
waveform at 780 nm is dramatically improved.
Features
l Active area: φ0.8 mm
l Miniature chip carrier package: 3 × 4.5 × 1.5 t mm
l Hollow structure sealed with glass resistant to violet
laser diode irradiation
l High sensitivity: 0.3 A/W Typ. (λ=405 nm)
: 0.4 A/W Typ. (
λ=650 nm, 780 nm)
l High-speed response: 450 MHz Typ.
(VR=2.5 V,
λ=405 nm, 650 nm)
300 MHz Typ.
(VR=2.5 V,
λ=780 nm)
l Surface-mount package suitable for lead-free solder
l High response waveform without decay time
Applications
l Laser diode monitor in 3-wavelength optical disk drive
(High-speed APC)
l Violet-laser detection (λ=405 nm)
PHOTODIODE
Si PIN photodiode
For optical pick-up laser monitor compatible with all types of optical disks
S9868
1
s
Absolute maximum ratings
Parameter
Symbol
Value
Unit
Reverse voltage
VR Max.
20
V
Operating temperature
Topr
-25 to +85
°C
Storage temperature
Tstg
-40 to +100
°C
s Electrical and optical characteristics (Ta=25 °C)
Parameter
Symbol
Condition
Min.
Typ.
Max.
Unit
Spectral response range
λ
-
320 to 1000
-
nm
Peak sensitivity wavelength
λp
-
720
-
nm
λ=405 nm
0.26
0.3
-
λ=650 nm
0.35
0.4
-
Photo sensitivity
S
λ=780 nm
0.350.4
-
A/W
Dark current
ID
VR=2.5 V
-
0.03
0.3
nA
λ=405 nm
250
450
-
λ=650 nm
250
450
-
Cut-off frequency
fc
VR=2.5 V
RL=50
-3 dB
λ=780 nm
150
300
-
MHz
Terminal capacitance
Ct
VR=2.5 V, f=1 MHz
-
5
10
pF
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