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參數資料
| 型號： | SA2D-E3/61T |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 整流器 |
| 英文描述： | 2 A, 200 V, SILICON, RECTIFIER DIODE, DO-214AC |
| 封裝： | ROHS COMPLIANT, PLASTIC, SMA, 2 PIN |
| 文件頁數： | 2/4頁 |
| 文件大小： | 82K |
| 代理商： | SA2D-E3/61T |
www.vishay.com
For technical questions within your region, please contact one of the following:
Document Number: 88969
2
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Revision: 13-Oct-09
SA2B thru SA2M
Vishay General Semiconductor
New Product
Note
(1) Thermal resistance from junction to ambient and from junction to lead, P.C.B. mounted on 0.79" x 0.79" (20 mm x 20 mm) copper pad areas
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
Fig. 1 - Maximum Forward Current Derating Curve
Fig. 2 - Forward Power Loss Characteristics
Fig. 3 - Maximum Non-Repetitive Peak Forward Surge Current
Fig. 4 - Typical Instantaneous Forward Characteristics
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
SA2B
SA2D
SA2G
SA2J
SA2K
SA2M
UNIT
Typical thermal resistance
RθJA
(1)
80
°C/W
RθJL
(1)
12
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
SA2J-E3/61T
0.064
61T
1800
7" diameter plastic tape and reel
SA2J-E3/5AT
0.064
5AT
7500
13" diameter plastic tape and reel
3.0
2.5
2.0
1.5
1.0
0.5
0
25
50
75
100
125
150
175
A
v
erage
Forwar
d
Rectified
Curr
ent
(A)
Lead Temperature (°C)
Lead Temperature
Resistive or Inductive Load
Ambient Temperature
P.C.B. Mounted on
0.79" x 0.79" (20 mm x 20 mm)
Copper Pad Areas
2.5
2.0
1.5
1.0
0.5
0
0.5
A
v
erage
Po
wer
Lo
ss
(W)
Average Forward Current (A)
D = t
p/T
t
p
T
D = 0.1
D = 0.2
D = 0.3
D = 0.5
D = 0.8
D = 1.0
8.3 ms Single Half Sine-Wave
110
70
10
20
30
40
50
60
0
100
Number of Cycles at 50 Hz
Peak
Forwar
d
S
ur
ge
Curr
ent
(A)
10
1
0.1
0.5
0.7
0.9
1.1
1.3
Instantaneous Forward Voltage (V)
In
s
tantaneou
s
Forwar
d
Curr
e
nt
(A)
T
J = 150 °C
T
J = 125 °C
T
J = 25 °C
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