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參數資料
| 型號： | SB2060LFCT |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | 10 A, 60 V, SILICON, RECTIFIER DIODE, TO-220AB |
| 封裝： | ROHS COMPLIANT, PLASTIC, ITO-220AB, 3 PIN |
| 文件頁數： | 1/2頁 |
| 文件大小： | 60K |
| 代理商： | SB2060LFCT |
PAGE . 1
September
14
,2010-REV.0
7
SB2060LFCT
DUAL LOW VF SCHOTTKY RECTIFIER
VOLTAGE
60 Volts
20 Amperes
FEATURES
Low forward voltage drop, low power losses
High efficiency operation
In compliance with EU RoHS 2002/95/EC directives
MECHANICAL DATA
Case : ITO-220AB, Plastic
Terminals : Solderable per MIL-STD-750, Method 2026
Weight: 0.055 ounces, 1.5615 grams
CURRENT
MAXIMUM RATINGS(T
A
=25
o
C unless otherwise noted)
ELECTRICAL CHARACTERISTICS(T
A
=25
o
C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Breakdown voltage
V
BR
I
R
=1mA
64
68
-
V
Instantaneous forward voltage per
diode
(1)
V
F
I
F
=5A
I
F
=10A
I
F
=5A
I
F
=10A
T
J
=25
o
C
-
-
-
-
-
-
0.44
0.51
-
-
-
-
0.51
0.60
0.44
0.56
0.5
20
V
T
J
=125
o
C
V
Reverse current per diode
(2)
I
R
V
R
=60V
T
J
=25
o
C
T
J
=100
o
C
mA
PARAMETER
SYMBOL
VALUE
UNIT
Maximum repetitive peak reverse voltage
V
RRM
60
V
Maximum average forward rectified current (Fig.
4
)
per device
per diode
I
F(AV)
20
10
A
Peak forward surge current 8.3ms single half sine-wave
superimposed on rated load per diode
per diode
I
FSM
145
A
Typical thermal resistance
R
Θ
JC
4.5
O
C / W
Operating junction
T
J
-55 to + 1
2
5
o
C
Storage temperature range
T
STG
-55 to + 150
o
C
Note.1.Pulse test : 380
μ
s pulse width, 1% duty cycle
2.Pulse test : Pulse width < 2.5ms
0
0
0.406(10.3)
0.381(9.7)
0.134(3.4)
0.118(3.0)
0.055(1.4)
0.039(1.0)
0.055(1.4)
0.039(1.0)
0.028(0.7)
0.019(0.5)
0.100(2.55)
0.100(2.55)
0
0
0
0
0.189(4.8)
0.165(4.2)
0.130(3.3)
0.114(2.9)
0.114(2.9)
0.098(2.5)
0.027(0.67)
0.022(0.57)
0
0
0
0
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