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參數資料
| 型號： | SB20H150CT-1-E3 |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 整流器 |
| 英文描述： | 10 A, 150 V, SILICON, RECTIFIER DIODE, TO-262AA |
| 封裝： | LEAD FREE, PLASTIC PACKAGE-3 |
| 文件頁數： | 1/5頁 |
| 文件大小： | 0K |
| 代理商： | SB20H150CT-1-E3 |
MBR20H150CT, MBRF20H150CT & SB20H150CT-1
Document Number 88864
29-Aug-05
Vishay Semiconductors
www.vishay.com
1
ITO-220AB
TO-262AA
MBR10H150CT
MBRF10H150CT
SB10H150CT-1
CASE
PIN 2
PIN 1
PIN 3
TO-220AB
1
2
3
1
2
3
1
2
3
Dual Common-Cathode High-Voltage Schottky Rectifier
Low Leakage Current 5.0 A
Major Ratings and Characteristics
Features
Guardring for overvoltage protection
Low power loss, high efficiency
Low forward voltage drop
High frequency operation
Solder Dip 260 °C, 40 seconds
IF(AV)
2 x 10 A
VRRM
150 V
IFSM
200 A
VF
0.75 V
Tj
175 °C
Mechanical Data
Case: TO-220AB, ITO-220AB, TO-262AA
Epoxy meets UL-94V-0 Flammability rating
Terminals: Matte Tin plated (E3 Suffix) leads, solder-
able per J-STD-002B and JESD22-B102D
Mounting Torque: 10 in-lbs maximum
Polarity: As marked
Typical Applications
For use in high frequency inverters, free wheeling and
polarity protection applications
Maximum Ratings
(TC = 25 °C, unless otherwise noted)
Parameter
Symbol
MBR20H150CT
Unit
Maximum repetitive peak reverse voltage
VRRM
150
V
Working peak reverse voltage
VRWM
150
V
Maximum DC blocking voltage
VDC
150
V
Maximum average forward rectified current
Total device
Per leg
IF(AV)
20
10
A
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load per leg
IFSM
200
A
Peak repetitive reverse current per leg at tp = 2 s, 1 KHz
IRRM
1.0
A
Peak non-repetitive reverse surge energy per leg (8/20 s waveform)
ERSM
10
mJ
Non-repetitive avalanche energy per leg at 25 °C, IAS = 1.5 A, L = 10 mH
EAS
11.25
mJ
Voltage rate of change (rated VR)
dv/dt
10000
V/s
Operating junction and storage temperature range
TJ, TSTG
- 65 to + 175
°C
Isolation voltage (ITO-220AB only)
From terminals to heatsink t = 1 minute
VAC
1500
V
相關PDF資料 |
PDF描述 |
|---|---|
| SB20H150CT-1 | 10 A, 150 V, SILICON, RECTIFIER DIODE, TO-262AA |
| SB20H150CT-1E3 | 10 A, 150 V, SILICON, RECTIFIER DIODE, TO-262AA |
| MBR2100CT-003PBF | 10 A, 100 V, SILICON, RECTIFIER DIODE |
| MBR2100CT-010PBF | 10 A, 100 V, SILICON, RECTIFIER DIODE |
| MBR2100CT-012PBF | 10 A, 100 V, SILICON, RECTIFIER DIODE |
相關代理商/技術參數 |
參數描述 |
|---|---|
| SB20H150CT-1E3/45 | 功能描述:肖特基二極管與整流器 150 Volt 20 Amp Dual Common-Cathode RoHS:否 制造商:Skyworks Solutions, Inc. 產品:Schottky Diodes 峰值反向電壓:2 V 正向連續電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
| SB20H150CT-45 | 制造商:KERSEMI 制造商全稱:Kersemi Electronic Co., Ltd. 功能描述:Dual Common-Cathode High-Voltage Schottky Rectifier |
| SB20H200CT-1 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Dual Common-Cathode High-Voltage Schottky Rectifier |
| SB20H200CT-1E3/45 | 功能描述:肖特基二極管與整流器 200 Volt 20 Amp Dual Common-Cathode RoHS:否 制造商:Skyworks Solutions, Inc. 產品:Schottky Diodes 峰值反向電壓:2 V 正向連續電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
| SB20J250E | 制造商:Ohmite Mfg Co 功能描述:Res Wirewound 250 Ohm 5% 20W ±260ppm/°C Silicone AXL |
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