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參數資料
型號: SBAV99LT1
廠商: ON SEMICONDUCTOR
元件分類: 二極管(射頻、小信號、開關、功率)
英文描述: 0.715 A, 70 V, 2 ELEMENT, SILICON, SIGNAL DIODE, TO-236AB
封裝: PLASTIC, CASE 318-08, TO-236, 3 PIN
文件頁數: 1/4頁
文件大小: 51K
代理商: SBAV99LT1
Semiconductor Components Industries, LLC, 2006
September, 2006 Rev. 4
1
Publication Order Number:
BAV99LT1/D
BAV99LT1
Dual Series
Switching Diode
Features
PbFree Packages are Available
MAXIMUM RATINGS (Each Diode)
Rating
Symbol
Value
Unit
Reverse Voltage
VR
70
Vdc
Forward Current
IF
215
mAdc
Peak Forward Surge Current
IFM(surge)
500
mAdc
Repetitive Peak Reverse Voltage
VRRM
70
V
Average Rectified Forward Current (Note 1)
(averaged over any 20 ms period)
IF(AV)
715
mA
Repetitive Peak Forward Current
IFRM
450
mA
NonRepetitive Peak Forward Current
t = 1.0
ms
t = 1.0 ms
t = 1.0 s
IFSM
2.0
1.0
0.5
A
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation
FR 5 Board (Note 1) TA = 25°C
Derate above 25
°C
PD
225
1.8
mW
mW/
°C
Thermal Resistance, JunctiontoAmbient
RqJA
556
°C/W
Total Device Dissipation
Alumina Substrate (Note 2)
TA = 25°C
Derate above 25
°C
PD
300
2.4
mW
mW/
°C
Thermal Resistance, JunctiontoAmbient
RqJA
417
°C/W
Junction and Storage
Temperature Range
TJ, Tstg
65 to
+150
°C
1. FR 5 = 1.0
0.75 0.062 in.
2. Alumina = 0.4
0.3 0.024 in 99.5% alumina.
Device
Package
Shipping
ORDERING INFORMATION
CASE 318
SOT23
STYLE 11
BAV99LT1
SOT23
3000/Tape & Reel
MARKING DIAGRAM
A7
= Specific Device Code
M
= Date Code
G
= PbFree Package
(Note: Microdot may be in either location)
1
2
3
CATHODE/ANODE
ANODE
1
CATHODE
2
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
BAV99LT3G
SOT23
(PbFree)
10,000/Tape & Reel
BAV99LT1G
SOT23
(PbFree)
3000/Tape & Reel
BAV99LT3
SOT23
10,000/Tape & Reel
http://onsemi.com
1
A7 M
G
相關PDF資料
PDF描述
SBD4010 40 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE
SBD4001 40 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE
SBD4006 40 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE
SBE002 1 A, 50 V, SILICON, SIGNAL DIODE
SBE002 1 A, 50 V, SILICON, SIGNAL DIODE
相關代理商/技術參數
參數描述
SBAV99LT1G 功能描述:二極管 - 通用,功率,開關 SS DUAL DIO SPCL TR RoHS:否 制造商:STMicroelectronics 產品:Switching Diodes 峰值反向電壓:600 V 正向連續電流:200 A 最大浪涌電流:800 A 配置: 恢復時間:2000 ns 正向電壓下降:1.25 V 最大反向漏泄電流:300 uA 最大功率耗散: 工作溫度范圍: 安裝風格:SMD/SMT 封裝 / 箱體:ISOTOP 封裝:Tube
SBAV99LT3G 功能描述:二極管 - 通用,功率,開關 SS DUAL DIO SPCL TR RoHS:否 制造商:STMicroelectronics 產品:Switching Diodes 峰值反向電壓:600 V 正向連續電流:200 A 最大浪涌電流:800 A 配置: 恢復時間:2000 ns 正向電壓下降:1.25 V 最大反向漏泄電流:300 uA 最大功率耗散: 工作溫度范圍: 安裝風格:SMD/SMT 封裝 / 箱體:ISOTOP 封裝:Tube
SBAV99RWT1G 功能描述:二極管 - 通用,功率,開關 SS SWCH DIO 70V TR RoHS:否 制造商:STMicroelectronics 產品:Switching Diodes 峰值反向電壓:600 V 正向連續電流:200 A 最大浪涌電流:800 A 配置: 恢復時間:2000 ns 正向電壓下降:1.25 V 最大反向漏泄電流:300 uA 最大功率耗散: 工作溫度范圍: 安裝風格:SMD/SMT 封裝 / 箱體:ISOTOP 封裝:Tube
SBAV99WT1 制造商:ON Semiconductor 功能描述:
SBAV99WT1G 功能描述:二極管 - 通用,功率,開關 SS DUAL DIODE TR RoHS:否 制造商:STMicroelectronics 產品:Switching Diodes 峰值反向電壓:600 V 正向連續電流:200 A 最大浪涌電流:800 A 配置: 恢復時間:2000 ns 正向電壓下降:1.25 V 最大反向漏泄電流:300 uA 最大功率耗散: 工作溫度范圍: 安裝風格:SMD/SMT 封裝 / 箱體:ISOTOP 封裝:Tube
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